Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications
This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm...
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| Format: | Article |
| Language: | English |
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Inst Engineering Technology-Iet, Michael Faraday House Six Hills Way Stevenage, Hertford Sg1 2ay, England
2015
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| Online Access: | http://eprints.um.edu.my/15647/1/Broadband_high_performance_laterally_diffused_metal-oxide-semiconductor_power_amplifier.pdf |
| _version_ | 1796946934838067200 |
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| author | Kumar, N. Anand, L. |
| author_facet | Kumar, N. Anand, L. |
| author_sort | Kumar, N. |
| collection | UM |
| description | This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (similar to 80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxide-semiconductor device). Experimental results demonstrated output power of similar to 80 W and gain of 45 dB, while preserving efficiency of 55 over the bandwidth from 760 to 870 MHz. According to author's knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date. |
| first_indexed | 2024-03-06T05:39:16Z |
| format | Article |
| id | um.eprints-15647 |
| institution | Universiti Malaya |
| language | English |
| last_indexed | 2024-03-06T05:39:16Z |
| publishDate | 2015 |
| publisher | Inst Engineering Technology-Iet, Michael Faraday House Six Hills Way Stevenage, Hertford Sg1 2ay, England |
| record_format | dspace |
| spelling | um.eprints-156472016-03-02T06:14:59Z http://eprints.um.edu.my/15647/ Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications Kumar, N. Anand, L. T Technology (General) TK Electrical engineering. Electronics Nuclear engineering This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (similar to 80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxide-semiconductor device). Experimental results demonstrated output power of similar to 80 W and gain of 45 dB, while preserving efficiency of 55 over the bandwidth from 760 to 870 MHz. According to author's knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date. Inst Engineering Technology-Iet, Michael Faraday House Six Hills Way Stevenage, Hertford Sg1 2ay, England 2015-07 Article PeerReviewed application/pdf en http://eprints.um.edu.my/15647/1/Broadband_high_performance_laterally_diffused_metal-oxide-semiconductor_power_amplifier.pdf Kumar, N. and Anand, L. (2015) Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications. IET Circuits, Devices and Systems, 9 (4). pp. 283-289. ISSN 1751-858X, DOI https://doi.org/10.1049/iet-cds.2014.0206 <https://doi.org/10.1049/iet-cds.2014.0206>. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7156294 10.1049/iet-cds.2014.0206 |
| spellingShingle | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering Kumar, N. Anand, L. Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title | Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title_full | Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title_fullStr | Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title_full_unstemmed | Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title_short | Broadband high performance laterally diffused metal-oxide-semiconductor power amplifier for mobile two-way radio applications |
| title_sort | broadband high performance laterally diffused metal oxide semiconductor power amplifier for mobile two way radio applications |
| topic | T Technology (General) TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.um.edu.my/15647/1/Broadband_high_performance_laterally_diffused_metal-oxide-semiconductor_power_amplifier.pdf |
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