Summary: | Polarized infrared (IR) reflectance measurement was carried out to investigate the optical
phonon modes of wurtzite structure Ino.92GaoosN thin film grown by molecular beam epitaxy·
Composition dependence of IR reststrahlen features was observed. Theoretical polarized ~
reflectance spectrum was simulated using the standard multilayer optics technique with a multloscillator
dielectric function model. By obtaining the best fit of experimental and theoretical
spectrum, the Brillouin zone center E, optical phonon modes together with the dielectric constant,
layer thickness, free carriers concentration and mobility were extracted non-destructively. The
extracted EI optical phonon modes were compared with those generated from modified random
element iso-displacement (MREI) model.
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