Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics

Lead-free 0.88(Na0.5Bi0.5)TiO3–0.084(K0.5Bi0.5)TiO3–0.036BaTiO3 (BNT–BKT–BT) piezoelectric ceramics were prepared using the conventional mixed-oxide method with a sintering temperature range of 1120–1200 °C. The effect of the sintering temperature on the crystal structure, microstructure, and densif...

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Main Authors: Mahdi, R.I., Al-Bahnam, N.J., Abbo, A.I., Hmood, J.K., Majid, W.H.A.
Format: Article
Published: Elsevier 2016
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author Mahdi, R.I.
Al-Bahnam, N.J.
Abbo, A.I.
Hmood, J.K.
Majid, W.H.A.
author_facet Mahdi, R.I.
Al-Bahnam, N.J.
Abbo, A.I.
Hmood, J.K.
Majid, W.H.A.
author_sort Mahdi, R.I.
collection UM
description Lead-free 0.88(Na0.5Bi0.5)TiO3–0.084(K0.5Bi0.5)TiO3–0.036BaTiO3 (BNT–BKT–BT) piezoelectric ceramics were prepared using the conventional mixed-oxide method with a sintering temperature range of 1120–1200 °C. The effect of the sintering temperature on the crystal structure, microstructure, and densification, as well as the dielectrics, piezoelectrics, and the pyroelectric properties of BNT–BKT–BT ceramics were investigated. Scanning electron microscopy and X-ray diffraction were used to study the microstructures of the sintered samples. The results showed that the increase in sintering temperature was very effective in improving both the density and electrical properties. However, the samples deteriorated when the sintering temperature was above the optimum. The BNT–BKT–BT ceramics exhibited an excellent structure and electrical properties at a 1180 °C sintering temperature. The density of the ceramics reached a maximum value of 5880 kg/cm3, which is about 98% of the theoretical density. The ceramic exhibited a pyroelectric coefficient of (p) 366 μC/m2 K, a piezoelectric coefficient of d33 = 183 pC/N, a remanent polarisation of Pr = 38.43 μC/cm2, a dielectric constant of ε′ = 933, a loss tangent (tan δ) of 0.0235, and the figure-of-merit for detection was (FD) of 15.408 μPa1/2. Improvement in the pyroelectric properties is crucial for the development of infrared detectors and sensors.
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spelling um.eprints-176982017-08-14T07:53:22Z http://eprints.um.edu.my/17698/ Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics Mahdi, R.I. Al-Bahnam, N.J. Abbo, A.I. Hmood, J.K. Majid, W.H.A. QC Physics TK Electrical engineering. Electronics Nuclear engineering Lead-free 0.88(Na0.5Bi0.5)TiO3–0.084(K0.5Bi0.5)TiO3–0.036BaTiO3 (BNT–BKT–BT) piezoelectric ceramics were prepared using the conventional mixed-oxide method with a sintering temperature range of 1120–1200 °C. The effect of the sintering temperature on the crystal structure, microstructure, and densification, as well as the dielectrics, piezoelectrics, and the pyroelectric properties of BNT–BKT–BT ceramics were investigated. Scanning electron microscopy and X-ray diffraction were used to study the microstructures of the sintered samples. The results showed that the increase in sintering temperature was very effective in improving both the density and electrical properties. However, the samples deteriorated when the sintering temperature was above the optimum. The BNT–BKT–BT ceramics exhibited an excellent structure and electrical properties at a 1180 °C sintering temperature. The density of the ceramics reached a maximum value of 5880 kg/cm3, which is about 98% of the theoretical density. The ceramic exhibited a pyroelectric coefficient of (p) 366 μC/m2 K, a piezoelectric coefficient of d33 = 183 pC/N, a remanent polarisation of Pr = 38.43 μC/cm2, a dielectric constant of ε′ = 933, a loss tangent (tan δ) of 0.0235, and the figure-of-merit for detection was (FD) of 15.408 μPa1/2. Improvement in the pyroelectric properties is crucial for the development of infrared detectors and sensors. Elsevier 2016 Article PeerReviewed Mahdi, R.I. and Al-Bahnam, N.J. and Abbo, A.I. and Hmood, J.K. and Majid, W.H.A. (2016) Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics. Journal of Alloys and Compounds, 688. pp. 77-87. ISSN 0925-8388, DOI https://doi.org/10.1016/j.jallcom.2016.06.290 <https://doi.org/10.1016/j.jallcom.2016.06.290>. http://dx.doi.org/10.1016/j.jallcom.2016.06.290 doi:10.1016/j.jallcom.2016.06.290
spellingShingle QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Mahdi, R.I.
Al-Bahnam, N.J.
Abbo, A.I.
Hmood, J.K.
Majid, W.H.A.
Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title_full Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title_fullStr Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title_full_unstemmed Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title_short Optimization of sintering temperature for the enhancement of pyroelectric properties of lead-free 0.88(Na 0.5 Bi 0.5 )TiO 3 –0.084(K 0.5 Bi 0.5 )TiO 3 –0.036BaTiO 3 piezoelectric ceramics
title_sort optimization of sintering temperature for the enhancement of pyroelectric properties of lead free 0 88 na 0 5 bi 0 5 tio 3 0 084 k 0 5 bi 0 5 tio 3 0 036batio 3 piezoelectric ceramics
topic QC Physics
TK Electrical engineering. Electronics Nuclear engineering
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