A new approach to study carrier generation in graphene nanoribbons under lateral bias
This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering a...
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| Format: | Article |
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American Scientific Publishers
2016
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| author | Ahmad, Harith Ghadiry, Mahdiar Abd Manaf, Asrulnizam |
| author_facet | Ahmad, Harith Ghadiry, Mahdiar Abd Manaf, Asrulnizam |
| author_sort | Ahmad, Harith |
| collection | UM |
| description | This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering are used to calculate the current and net generation rate respectively. In addition, two fabricated devices with gate lengths of 20 and 30 nm are employed for verification. We showed that ignoring this effect in the modelling, results in error up to 10% for a typical 30 nm graphene field effect transistor. This approach is useful in modelling and optimization of graphene-based field effect transistors and photo sensors. |
| first_indexed | 2024-03-06T05:44:27Z |
| format | Article |
| id | um.eprints-18100 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:44:27Z |
| publishDate | 2016 |
| publisher | American Scientific Publishers |
| record_format | dspace |
| spelling | um.eprints-181002019-12-18T08:05:46Z http://eprints.um.edu.my/18100/ A new approach to study carrier generation in graphene nanoribbons under lateral bias Ahmad, Harith Ghadiry, Mahdiar Abd Manaf, Asrulnizam QC Physics This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering are used to calculate the current and net generation rate respectively. In addition, two fabricated devices with gate lengths of 20 and 30 nm are employed for verification. We showed that ignoring this effect in the modelling, results in error up to 10% for a typical 30 nm graphene field effect transistor. This approach is useful in modelling and optimization of graphene-based field effect transistors and photo sensors. American Scientific Publishers 2016 Article PeerReviewed Ahmad, Harith and Ghadiry, Mahdiar and Abd Manaf, Asrulnizam (2016) A new approach to study carrier generation in graphene nanoribbons under lateral bias. Materials Express, 6 (3). pp. 283-288. ISSN 2158-5849, DOI https://doi.org/10.1166/mex.2016.1305 <https://doi.org/10.1166/mex.2016.1305>. http://dx.doi.org/10.1166/mex.2016.1305 doi:10.1166/mex.2016.1305 |
| spellingShingle | QC Physics Ahmad, Harith Ghadiry, Mahdiar Abd Manaf, Asrulnizam A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title | A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title_full | A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title_fullStr | A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title_full_unstemmed | A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title_short | A new approach to study carrier generation in graphene nanoribbons under lateral bias |
| title_sort | new approach to study carrier generation in graphene nanoribbons under lateral bias |
| topic | QC Physics |
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