High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffe...
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| Format: | Article |
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MDPI
2016
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| author | Al-Hardan, N.H. Hamid, M.A.A. Ahmed, N.M. Jalar, A. Shamsudin, R. Othman, N.K. Keng, L.K. Chiu, W.S. Al-Rawi, H.N. |
| author_facet | Al-Hardan, N.H. Hamid, M.A.A. Ahmed, N.M. Jalar, A. Shamsudin, R. Othman, N.K. Keng, L.K. Chiu, W.S. Al-Rawi, H.N. |
| author_sort | Al-Hardan, N.H. |
| collection | UM |
| description | In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. |
| first_indexed | 2024-03-06T05:44:47Z |
| format | Article |
| id | um.eprints-18215 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:44:47Z |
| publishDate | 2016 |
| publisher | MDPI |
| record_format | dspace |
| spelling | um.eprints-182152017-11-10T03:56:42Z http://eprints.um.edu.my/18215/ High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor Al-Hardan, N.H. Hamid, M.A.A. Ahmed, N.M. Jalar, A. Shamsudin, R. Othman, N.K. Keng, L.K. Chiu, W.S. Al-Rawi, H.N. Q Science (General) QC Physics In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. MDPI 2016 Article PeerReviewed Al-Hardan, N.H. and Hamid, M.A.A. and Ahmed, N.M. and Jalar, A. and Shamsudin, R. and Othman, N.K. and Keng, L.K. and Chiu, W.S. and Al-Rawi, H.N. (2016) High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor. Sensors, 16 (6). p. 839. ISSN 1424-8220, DOI https://doi.org/10.3390/s16060839 <https://doi.org/10.3390/s16060839>. https://doi.org/10.3390/s16060839 doi:10.3390/s16060839 |
| spellingShingle | Q Science (General) QC Physics Al-Hardan, N.H. Hamid, M.A.A. Ahmed, N.M. Jalar, A. Shamsudin, R. Othman, N.K. Keng, L.K. Chiu, W.S. Al-Rawi, H.N. High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title | High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title_full | High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title_fullStr | High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title_full_unstemmed | High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title_short | High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor |
| title_sort | high sensitivity ph sensor based on porous silicon psi extended gate field effect transistor |
| topic | Q Science (General) QC Physics |
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