High sensitivity pH sensor based on porous silicon (PSi) extended gate field-effect transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffe...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
MDPI
2016
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| Subjects: |