High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the el...
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| Format: | Article |
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Elsevier
2016
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| _version_ | 1825721072830382080 |
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| author | Ali, A.H. Hassan, Z. Shuhaimi, A. |
| author_facet | Ali, A.H. Hassan, Z. Shuhaimi, A. |
| author_sort | Ali, A.H. |
| collection | UM |
| description | This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering system in room temperature. Post-annealing treatment was conducted on the TCC after the deposition process at 600 °C for 15 min. TCC sample analysis was conducted in order to determine the structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity and optical transmittance of the post-annealed sample improved significantly as compared to the as-deposited samples. The measured electrical resistivity and optical transmittance of the post-annealed sample is 8.607 × 10−5Ω-cm and 95%, respectively resulted in high figure of merit of 5.91 × 10−2Ω−1. |
| first_indexed | 2024-03-06T05:44:47Z |
| format | Article |
| id | um.eprints-18219 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:44:47Z |
| publishDate | 2016 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-182192017-11-10T05:30:26Z http://eprints.um.edu.my/18219/ High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN Ali, A.H. Hassan, Z. Shuhaimi, A. Q Science (General) QC Physics This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering system in room temperature. Post-annealing treatment was conducted on the TCC after the deposition process at 600 °C for 15 min. TCC sample analysis was conducted in order to determine the structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity and optical transmittance of the post-annealed sample improved significantly as compared to the as-deposited samples. The measured electrical resistivity and optical transmittance of the post-annealed sample is 8.607 × 10−5Ω-cm and 95%, respectively resulted in high figure of merit of 5.91 × 10−2Ω−1. Elsevier 2016 Article PeerReviewed Ali, A.H. and Hassan, Z. and Shuhaimi, A. (2016) High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN. Journal of Alloys and Compounds, 681. pp. 186-190. ISSN 0925-8388, DOI https://doi.org/10.1016/j.jallcom.2016.04.123 <https://doi.org/10.1016/j.jallcom.2016.04.123>. https://doi.org/10.1016/j.jallcom.2016.04.123 doi:10.1016/j.jallcom.2016.04.123 |
| spellingShingle | Q Science (General) QC Physics Ali, A.H. Hassan, Z. Shuhaimi, A. High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title | High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title_full | High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title_fullStr | High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title_full_unstemmed | High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title_short | High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN |
| title_sort | high figure of merit of the post annealed ti al ito transparent conductive contacts sputter deposited on n gan |
| topic | Q Science (General) QC Physics |
| work_keys_str_mv | AT aliah highfigureofmeritofthepostannealedtialitotransparentconductivecontactssputterdepositedonngan AT hassanz highfigureofmeritofthepostannealedtialitotransparentconductivecontactssputterdepositedonngan AT shuhaimia highfigureofmeritofthepostannealedtialitotransparentconductivecontactssputterdepositedonngan |