Investigations on the Role of N2:(N2 + CH4) Ratio on the Growth of Hydrophobic Nanostructured Hydrogenated Carbon Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Investigations on the Role of N2:(N2 + CH4) Ratio on the Growth of Hydrophobic Nanostructured Hydrogenated Carbon Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Nanostructured hydrogenated carbon nitride (CNx:H) thin films were synthesized on a crystal silicon substrate at lowdeposition temperature by radio-frequency plasma-enhanced chemical vapor deposition (PECVD). Methane and nitrogen were the precursor gases used in this deposition process. The effects...

Полное описание

Библиографические подробности
Главные авторы:	Khanis, N.H., Ritikos, R., Kamal, S.A.A., Rahman, S.A.
Формат:	Статья
Опубликовано:	MDPI 2017
Предметы:	Q Science (General) QC Physics

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