Highly efficient short length Bismuth-based erbium-doped fiber amplifier
An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to...
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| Format: | Article |
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IOP Publishing
2011
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| author | Cheng, Xiau S. Hamida, Belal Ahmed Arof, Hamzah Ahmad, Harith Harun, Sulaiman Wadi |
| author_facet | Cheng, Xiau S. Hamida, Belal Ahmed Arof, Hamzah Ahmad, Harith Harun, Sulaiman Wadi |
| author_sort | Cheng, Xiau S. |
| collection | UM |
| description | An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB. |
| first_indexed | 2024-03-06T05:49:32Z |
| format | Article |
| id | um.eprints-19871 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:49:32Z |
| publishDate | 2011 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | um.eprints-198712019-04-08T06:25:09Z http://eprints.um.edu.my/19871/ Highly efficient short length Bismuth-based erbium-doped fiber amplifier Cheng, Xiau S. Hamida, Belal Ahmed Arof, Hamzah Ahmad, Harith Harun, Sulaiman Wadi QC Physics TK Electrical engineering. Electronics Nuclear engineering An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB. IOP Publishing 2011 Article PeerReviewed Cheng, Xiau S. and Hamida, Belal Ahmed and Arof, Hamzah and Ahmad, Harith and Harun, Sulaiman Wadi (2011) Highly efficient short length Bismuth-based erbium-doped fiber amplifier. Laser Physics, 21 (10). pp. 1793-1796. ISSN 1054-660X, DOI https://doi.org/10.1134/S1054660X11170038 <https://doi.org/10.1134/S1054660X11170038>. https://doi.org/10.1134/S1054660X11170038 doi:10.1134/S1054660X11170038 |
| spellingShingle | QC Physics TK Electrical engineering. Electronics Nuclear engineering Cheng, Xiau S. Hamida, Belal Ahmed Arof, Hamzah Ahmad, Harith Harun, Sulaiman Wadi Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title | Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title_full | Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title_fullStr | Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title_full_unstemmed | Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title_short | Highly efficient short length Bismuth-based erbium-doped fiber amplifier |
| title_sort | highly efficient short length bismuth based erbium doped fiber amplifier |
| topic | QC Physics TK Electrical engineering. Electronics Nuclear engineering |
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