Highly efficient short length Bismuth-based erbium-doped fiber amplifier

Highly efficient short length Bismuth-based erbium-doped fiber amplifier

An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to...

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Bibliographic Details
Main Authors:	Cheng, Xiau S., Hamida, Belal Ahmed, Arof, Hamzah, Ahmad, Harith, Harun, Sulaiman Wadi
Format:	Article
Published:	IOP Publishing 2011
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering

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