Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger g...
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| Format: | Article |
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Springer Verlag (Germany)
2018
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| author | Saini, Shrikant Mele, Paolo Osugi, Shunsuke Adam, Malik Ismail |
| author_facet | Saini, Shrikant Mele, Paolo Osugi, Shunsuke Adam, Malik Ismail |
| author_sort | Saini, Shrikant |
| collection | UM |
| description | We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen. |
| first_indexed | 2024-03-06T05:52:21Z |
| format | Article |
| id | um.eprints-20810 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:52:21Z |
| publishDate | 2018 |
| publisher | Springer Verlag (Germany) |
| record_format | dspace |
| spelling | um.eprints-208102019-04-05T07:59:56Z http://eprints.um.edu.my/20810/ Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition Saini, Shrikant Mele, Paolo Osugi, Shunsuke Adam, Malik Ismail TJ Mechanical engineering and machinery We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen. Springer Verlag (Germany) 2018 Article PeerReviewed Saini, Shrikant and Mele, Paolo and Osugi, Shunsuke and Adam, Malik Ismail (2018) Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. Journal of Materials Engineering and Performance, 27 (12). pp. 6286-6290. ISSN 1059-9495, DOI https://doi.org/10.1007/s11665-018-3601-6 <https://doi.org/10.1007/s11665-018-3601-6>. https://doi.org/10.1007/s11665-018-3601-6 doi:10.1007/s11665-018-3601-6 |
| spellingShingle | TJ Mechanical engineering and machinery Saini, Shrikant Mele, Paolo Osugi, Shunsuke Adam, Malik Ismail Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title | Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title_full | Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title_fullStr | Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title_full_unstemmed | Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title_short | Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition |
| title_sort | effect of oxygen pressure on thermoelectric properties of p type cualo2 films fabricated by pulsed laser deposition |
| topic | TJ Mechanical engineering and machinery |
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