Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium...

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Bibliographic Details
Main Authors:	Omar, Al-Zuhairi, Shuhaimi, Ahmad, Makinudin, Abdullah Haaziq Ahmad, Abdul Khudus, Muhammad Imran Mustafa, Azman, Adreen, Kamarundzaman, Anas, Supangat, Azzuliani
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics

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