Design of Low Power Low Noise Amplifier using Gm-boosted Technique

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that lea...

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主要な著者: Muhamad, Maizan, Soin, Norhayati, Ramiah, Harikrishnan
フォーマット: 論文
出版事項: Institute of Advanced Engineering and Science 2018
主題:
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author Muhamad, Maizan
Soin, Norhayati
Ramiah, Harikrishnan
author_facet Muhamad, Maizan
Soin, Norhayati
Ramiah, Harikrishnan
author_sort Muhamad, Maizan
collection UM
description This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.
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publisher Institute of Advanced Engineering and Science
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spelling um.eprints-212092019-05-09T08:23:41Z http://eprints.um.edu.my/21209/ Design of Low Power Low Noise Amplifier using Gm-boosted Technique Muhamad, Maizan Soin, Norhayati Ramiah, Harikrishnan TK Electrical engineering. Electronics Nuclear engineering This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated. Institute of Advanced Engineering and Science 2018 Article PeerReviewed Muhamad, Maizan and Soin, Norhayati and Ramiah, Harikrishnan (2018) Design of Low Power Low Noise Amplifier using Gm-boosted Technique. Indonesian Journal of Electrical Engineering and Computer Science, 9 (3). pp. 685-689. ISSN 2502-4752, DOI https://doi.org/10.11591/ijeecs.v9.i3.pp685-689 <https://doi.org/10.11591/ijeecs.v9.i3.pp685-689>. https://doi.org/10.11591/ijeecs.v9.i3.pp685-689 doi:10.11591/ijeecs.v9.i3.pp685-689
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Muhamad, Maizan
Soin, Norhayati
Ramiah, Harikrishnan
Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title_full Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title_fullStr Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title_full_unstemmed Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title_short Design of Low Power Low Noise Amplifier using Gm-boosted Technique
title_sort design of low power low noise amplifier using gm boosted technique
topic TK Electrical engineering. Electronics Nuclear engineering
work_keys_str_mv AT muhamadmaizan designoflowpowerlownoiseamplifierusinggmboostedtechnique
AT soinnorhayati designoflowpowerlownoiseamplifierusinggmboostedtechnique
AT ramiahharikrishnan designoflowpowerlownoiseamplifierusinggmboostedtechnique