Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) a...
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| Format: | Article |
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INOE
2018
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| author | Mohd Sarjidan, Mohd Arif Abd Majid, Wan Haliza |
| author_facet | Mohd Sarjidan, Mohd Arif Abd Majid, Wan Haliza |
| author_sort | Mohd Sarjidan, Mohd Arif |
| collection | UM |
| description | Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail. |
| first_indexed | 2024-03-06T05:53:34Z |
| format | Article |
| id | um.eprints-21234 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:53:34Z |
| publishDate | 2018 |
| publisher | INOE |
| record_format | dspace |
| spelling | um.eprints-212342019-05-15T06:46:04Z http://eprints.um.edu.my/21234/ Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode Mohd Sarjidan, Mohd Arif Abd Majid, Wan Haliza Q Science (General) QC Physics Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail. INOE 2018 Article PeerReviewed Mohd Sarjidan, Mohd Arif and Abd Majid, Wan Haliza (2018) Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode. Journal of Optoelectronics and Advanced Materials, 20 (5-6). pp. 285-289. ISSN 1454-4164, https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4223&catid=111 |
| spellingShingle | Q Science (General) QC Physics Mohd Sarjidan, Mohd Arif Abd Majid, Wan Haliza Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title | Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title_full | Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title_fullStr | Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title_full_unstemmed | Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title_short | Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode |
| title_sort | electrical and luminescence properties of meh ppv vertical organic light emitting transistors with an ultra thin aluminum source electrode |
| topic | Q Science (General) QC Physics |
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