An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V )...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers
2018
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| _version_ | 1796961445857984512 |
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| author | Lim, Chee Cheow Ramiah, Harikrishnan Yin, Jun Mak, Pui-In Martins, Rui Paulo |
| author_facet | Lim, Chee Cheow Ramiah, Harikrishnan Yin, Jun Mak, Pui-In Martins, Rui Paulo |
| author_sort | Lim, Chee Cheow |
| collection | UM |
| description | This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V ) while creating two intrinsic-high-Q impedance peaks at the fundamental (f LO ) and double (2f LO ) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm 2 . |
| first_indexed | 2024-03-06T05:54:13Z |
| format | Article |
| id | um.eprints-21460 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:54:13Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | um.eprints-214602019-06-11T04:23:48Z http://eprints.um.edu.my/21460/ An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances Lim, Chee Cheow Ramiah, Harikrishnan Yin, Jun Mak, Pui-In Martins, Rui Paulo TK Electrical engineering. Electronics Nuclear engineering This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V ) while creating two intrinsic-high-Q impedance peaks at the fundamental (f LO ) and double (2f LO ) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm 2 . Institute of Electrical and Electronics Engineers 2018 Article PeerReviewed Lim, Chee Cheow and Ramiah, Harikrishnan and Yin, Jun and Mak, Pui-In and Martins, Rui Paulo (2018) An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances. IEEE Journal of Solid-State Circuits, 53 (12). pp. 3528-3539. ISSN 0018-9200, DOI https://doi.org/10.1109/JSSC.2018.2875099 <https://doi.org/10.1109/JSSC.2018.2875099>. https://doi.org/10.1109/JSSC.2018.2875099 doi:10.1109/JSSC.2018.2875099 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Lim, Chee Cheow Ramiah, Harikrishnan Yin, Jun Mak, Pui-In Martins, Rui Paulo An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title | An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title_full | An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title_fullStr | An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title_full_unstemmed | An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title_short | An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances |
| title_sort | inverse class f cmos oscillator with intrinsic high q first harmonic and second harmonic resonances |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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