Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction...
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Springer
2018
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| author | Lei, Zhen Ce Zainal Abidin, Nor Ishida Wong, Yew Hoong |
| author_facet | Lei, Zhen Ce Zainal Abidin, Nor Ishida Wong, Yew Hoong |
| author_sort | Lei, Zhen Ce |
| collection | UM |
| description | The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated. |
| first_indexed | 2024-03-06T05:54:18Z |
| format | Article |
| id | um.eprints-21491 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:54:18Z |
| publishDate | 2018 |
| publisher | Springer |
| record_format | dspace |
| spelling | um.eprints-214912019-06-17T08:18:44Z http://eprints.um.edu.my/21491/ Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient Lei, Zhen Ce Zainal Abidin, Nor Ishida Wong, Yew Hoong TJ Mechanical engineering and machinery The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated. Springer 2018 Article PeerReviewed Lei, Zhen Ce and Zainal Abidin, Nor Ishida and Wong, Yew Hoong (2018) Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient. Journal of Materials Science: Materials in Electronics, 29 (15). pp. 12888-12898. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-018-9408-2 <https://doi.org/10.1007/s10854-018-9408-2>. https://doi.org/10.1007/s10854-018-9408-2 doi:10.1007/s10854-018-9408-2 |
| spellingShingle | TJ Mechanical engineering and machinery Lei, Zhen Ce Zainal Abidin, Nor Ishida Wong, Yew Hoong Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title | Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title_full | Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title_fullStr | Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title_full_unstemmed | Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title_short | Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient |
| title_sort | structural chemical and electrical properties of zro2 ge system formed via oxidation nitridation in n2o gas ambient |
| topic | TJ Mechanical engineering and machinery |
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