Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction...
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| Format: | Article |
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Springer
2018
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