Vertical Ge photodetector base on InP taper waveguide

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the mon...

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Main Authors: Amiri, Iraj Sadegh, Ariannejad, Mohammad Mahdi, Azzuhri, Saaidal Razalli, Anwar, Toni, Kouhdaragh, Vahid, Yupapin, Preecha Promphan
Format: Article
Published: Elsevier 2018
Subjects:
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author Amiri, Iraj Sadegh
Ariannejad, Mohammad Mahdi
Azzuhri, Saaidal Razalli
Anwar, Toni
Kouhdaragh, Vahid
Yupapin, Preecha Promphan
author_facet Amiri, Iraj Sadegh
Ariannejad, Mohammad Mahdi
Azzuhri, Saaidal Razalli
Anwar, Toni
Kouhdaragh, Vahid
Yupapin, Preecha Promphan
author_sort Amiri, Iraj Sadegh
collection UM
description In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.
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institution Universiti Malaya
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spelling um.eprints-224872019-09-23T06:37:48Z http://eprints.um.edu.my/22487/ Vertical Ge photodetector base on InP taper waveguide Amiri, Iraj Sadegh Ariannejad, Mohammad Mahdi Azzuhri, Saaidal Razalli Anwar, Toni Kouhdaragh, Vahid Yupapin, Preecha Promphan QA75 Electronic computers. Computer science In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. Elsevier 2018 Article PeerReviewed Amiri, Iraj Sadegh and Ariannejad, Mohammad Mahdi and Azzuhri, Saaidal Razalli and Anwar, Toni and Kouhdaragh, Vahid and Yupapin, Preecha Promphan (2018) Vertical Ge photodetector base on InP taper waveguide. Results in Physics, 9. pp. 576-579. ISSN 2211-3797, DOI https://doi.org/10.1016/j.rinp.2018.03.014 <https://doi.org/10.1016/j.rinp.2018.03.014>. https://doi.org/10.1016/j.rinp.2018.03.014 doi:10.1016/j.rinp.2018.03.014
spellingShingle QA75 Electronic computers. Computer science
Amiri, Iraj Sadegh
Ariannejad, Mohammad Mahdi
Azzuhri, Saaidal Razalli
Anwar, Toni
Kouhdaragh, Vahid
Yupapin, Preecha Promphan
Vertical Ge photodetector base on InP taper waveguide
title Vertical Ge photodetector base on InP taper waveguide
title_full Vertical Ge photodetector base on InP taper waveguide
title_fullStr Vertical Ge photodetector base on InP taper waveguide
title_full_unstemmed Vertical Ge photodetector base on InP taper waveguide
title_short Vertical Ge photodetector base on InP taper waveguide
title_sort vertical ge photodetector base on inp taper waveguide
topic QA75 Electronic computers. Computer science
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AT azzuhrisaaidalrazalli verticalgephotodetectorbaseoninptaperwaveguide
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