Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si
This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500–700 °C. From...
Main Authors: | Ali, Ahmad Hadi, Hassan, Zainuriah, Shuhaimi, Ahmad |
---|---|
Format: | Article |
Published: |
Elsevier
2018
|
Subjects: |
Similar Items
-
High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
by: Ali, A.H., et al.
Published: (2016) -
Influence of substrate and annealing temperatures on optical properties of RF-sputtered TiO2 thin films
by: Hasan, M.M., et al.
Published: (2010) -
Ferroelectric thin films by RF sputtering technology
by: Zhu, Weiguang
Published: (2008) -
Effect of Annealing Temperature of Cugao2 thin Films by Using RF Magnetron Sputtering Technique on Optical and Structural Properties
by: Lam, Wai Yip, et al.
Published: (2018) -
Enhancement of Surface Properties Using New Annealing Technique for ITO Thin Films
by: Hegde, Gurumurthy, et al.
Published: (2014)