High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector
A self-powered n-Si/C–ZnO/SiO2/p-Si heterojunction photodetector (PD) which comprises of carbon (C) and zinc oxide (ZnO) nanostructures on a n-type silicon (n-Si) substrate was prepared via vapor phase transport method. Excellent photodetection under 468 nm light illumination for powers ranging from...
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| Format: | Article |
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Springer Verlag
2018
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| _version_ | 1796961675023220736 |
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| author | Ahmad, Harith Thandavan, Tamil Many K. |
| author_facet | Ahmad, Harith Thandavan, Tamil Many K. |
| author_sort | Ahmad, Harith |
| collection | UM |
| description | A self-powered n-Si/C–ZnO/SiO2/p-Si heterojunction photodetector (PD) which comprises of carbon (C) and zinc oxide (ZnO) nanostructures on a n-type silicon (n-Si) substrate was prepared via vapor phase transport method. Excellent photodetection under 468 nm light illumination for powers ranging from 2.78 to 2910 µW delivered a quick response of about 9.5 µs. A high photoresponsivity of 2.082/AW and external quantum efficiency about 551% were obtained. The mechanism involved for the generation of a photocurrent at a zero bias voltage was discussed for future energy efficient optoelectronics devices. The morphology and composition of C, Zn and O were confirmed by field emission scanning electron microscope, energy dispersive X-ray and Raman scattering analysis. The formation of ZnO nanowires range from 10 to 100 nm, aided by the photoconduction mechanism. The Raman E2 high mode of 437/cm of ZnO and the presence of D and G bands show the formation of a hybrid C–ZnO thin film. The calculated rectifying ratio is found to shift as the direct current bias voltage and light power increased. The deposition of C particles on the ZnO surface creates point defects and sub-energy levels in the ZnO bandgap which favour fast responsivity in the PD. |
| first_indexed | 2024-03-06T05:57:39Z |
| format | Article |
| id | um.eprints-22674 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:57:39Z |
| publishDate | 2018 |
| publisher | Springer Verlag |
| record_format | dspace |
| spelling | um.eprints-226742019-10-07T02:52:32Z http://eprints.um.edu.my/22674/ High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector Ahmad, Harith Thandavan, Tamil Many K. Q Science (General) QC Physics A self-powered n-Si/C–ZnO/SiO2/p-Si heterojunction photodetector (PD) which comprises of carbon (C) and zinc oxide (ZnO) nanostructures on a n-type silicon (n-Si) substrate was prepared via vapor phase transport method. Excellent photodetection under 468 nm light illumination for powers ranging from 2.78 to 2910 µW delivered a quick response of about 9.5 µs. A high photoresponsivity of 2.082/AW and external quantum efficiency about 551% were obtained. The mechanism involved for the generation of a photocurrent at a zero bias voltage was discussed for future energy efficient optoelectronics devices. The morphology and composition of C, Zn and O were confirmed by field emission scanning electron microscope, energy dispersive X-ray and Raman scattering analysis. The formation of ZnO nanowires range from 10 to 100 nm, aided by the photoconduction mechanism. The Raman E2 high mode of 437/cm of ZnO and the presence of D and G bands show the formation of a hybrid C–ZnO thin film. The calculated rectifying ratio is found to shift as the direct current bias voltage and light power increased. The deposition of C particles on the ZnO surface creates point defects and sub-energy levels in the ZnO bandgap which favour fast responsivity in the PD. Springer Verlag 2018 Article PeerReviewed Ahmad, Harith and Thandavan, Tamil Many K. (2018) High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector. Applied Nanoscience, 8 (7). pp. 1755-1765. ISSN 2190-5509, DOI https://doi.org/10.1007/s13204-018-0842-5 <https://doi.org/10.1007/s13204-018-0842-5>. https://doi.org/10.1007/s13204-018-0842-5 doi:10.1007/s13204-018-0842-5 |
| spellingShingle | Q Science (General) QC Physics Ahmad, Harith Thandavan, Tamil Many K. High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title | High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title_full | High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title_fullStr | High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title_full_unstemmed | High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title_short | High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector |
| title_sort | high responsivity self powered carbon zinc oxide hybrid thin film based photodetector |
| topic | Q Science (General) QC Physics |
| work_keys_str_mv | AT ahmadharith highresponsivityselfpoweredcarbonzincoxidehybridthinfilmbasedphotodetector AT thandavantamilmanyk highresponsivityselfpoweredcarbonzincoxidehybridthinfilmbasedphotodetector |