Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
A high-quality aluminium nitride buffer layers were grown on (0 0 0 1) sapphire substrate at standard pressure with a subsequent low growth temperature via metal organic chemical vapour deposition. The preparation of aluminium nitride buffer layers was accomplished by growing a thin aluminium nitrid...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2018
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| Subjects: |