Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers
Spin coated polyvinlylidenefluoride-trifluoroetylene (PVDF-TrFE 70/30mol%) copolymer thin film were initially produced and annealed at varying temperatures (100°C to 160°C). The morphology, dielectric and ferroelectric analysis showed that PVDF-TrFE film annealed at 120°C produced the highest remnan...
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Universiti Putra Malaysia
2017
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author | Wahid, Mohamad Hafiz Mohd Dahan, Rozana Mohd Arshad, Adillah Nurashikin Zulkefle, Habibah Sa'ad, Siti Zaleha Mahmood, Mohamad Rusop Gan, Wee Chen Abd Majid, Wan Haliza |
author_facet | Wahid, Mohamad Hafiz Mohd Dahan, Rozana Mohd Arshad, Adillah Nurashikin Zulkefle, Habibah Sa'ad, Siti Zaleha Mahmood, Mohamad Rusop Gan, Wee Chen Abd Majid, Wan Haliza |
author_sort | Wahid, Mohamad Hafiz Mohd |
collection | UM |
description | Spin coated polyvinlylidenefluoride-trifluoroetylene (PVDF-TrFE 70/30mol%) copolymer thin film were initially produced and annealed at varying temperatures (100°C to 160°C). The morphology, dielectric and ferroelectric analysis showed that PVDF-TrFE film annealed at 120°C produced the highest remnant polarization, Pr of 92 mC/m2, with orderly and grain-like shaped crystallites. The filled PVDF-TrFE, loaded with various volume percentages (1 – 7%) of Magnesium Oxide (MgO) nanofillers and then, annealed at 120°C, produced homogenous filler distribution with low agglomerates, especially for 3% PVDF-TrFE filled films. Moreover, the annealed PVDF-TrFE/MgO(3%) generated the highest value of Pr in comparison to the other filled nanocomposite thin films. Most importantly, the saturation of hysteresis loop, Ps for annealed PVDF-TrFE/MgO(3%) film was relatively improved by 20% as compared to the unfilled annealed thin film. This study established that, 3% MgO loaded in PVDF-TrFE thin film and annealed at 120 °C demonstrated a stable ferroelectric thin film, closed to an ideal ferroelectric film, in which the ratio Pr/Ps for the film established a value approaching unity (value of 1). |
first_indexed | 2024-03-06T05:58:09Z |
format | Article |
id | um.eprints-22837 |
institution | Universiti Malaya |
last_indexed | 2024-03-06T05:58:09Z |
publishDate | 2017 |
publisher | Universiti Putra Malaysia |
record_format | dspace |
spelling | um.eprints-228372019-10-24T04:39:03Z http://eprints.um.edu.my/22837/ Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers Wahid, Mohamad Hafiz Mohd Dahan, Rozana Mohd Arshad, Adillah Nurashikin Zulkefle, Habibah Sa'ad, Siti Zaleha Mahmood, Mohamad Rusop Gan, Wee Chen Abd Majid, Wan Haliza QC Physics TK Electrical engineering. Electronics Nuclear engineering Spin coated polyvinlylidenefluoride-trifluoroetylene (PVDF-TrFE 70/30mol%) copolymer thin film were initially produced and annealed at varying temperatures (100°C to 160°C). The morphology, dielectric and ferroelectric analysis showed that PVDF-TrFE film annealed at 120°C produced the highest remnant polarization, Pr of 92 mC/m2, with orderly and grain-like shaped crystallites. The filled PVDF-TrFE, loaded with various volume percentages (1 – 7%) of Magnesium Oxide (MgO) nanofillers and then, annealed at 120°C, produced homogenous filler distribution with low agglomerates, especially for 3% PVDF-TrFE filled films. Moreover, the annealed PVDF-TrFE/MgO(3%) generated the highest value of Pr in comparison to the other filled nanocomposite thin films. Most importantly, the saturation of hysteresis loop, Ps for annealed PVDF-TrFE/MgO(3%) film was relatively improved by 20% as compared to the unfilled annealed thin film. This study established that, 3% MgO loaded in PVDF-TrFE thin film and annealed at 120 °C demonstrated a stable ferroelectric thin film, closed to an ideal ferroelectric film, in which the ratio Pr/Ps for the film established a value approaching unity (value of 1). Universiti Putra Malaysia 2017 Article PeerReviewed Wahid, Mohamad Hafiz Mohd and Dahan, Rozana Mohd and Arshad, Adillah Nurashikin and Zulkefle, Habibah and Sa'ad, Siti Zaleha and Mahmood, Mohamad Rusop and Gan, Wee Chen and Abd Majid, Wan Haliza (2017) Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers. Pertanika Journal of Science and Technology, 25 (S3). pp. 107-118. ISSN 0128-7680, http://www.pertanika.upm.edu.my/Pertanika%20PAPERS/JST%20Vol.%2025%20(S)%20Mar.%202017/12%20JST(S)-0161-2016-1stProof.pdf |
spellingShingle | QC Physics TK Electrical engineering. Electronics Nuclear engineering Wahid, Mohamad Hafiz Mohd Dahan, Rozana Mohd Arshad, Adillah Nurashikin Zulkefle, Habibah Sa'ad, Siti Zaleha Mahmood, Mohamad Rusop Gan, Wee Chen Abd Majid, Wan Haliza Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title | Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title_full | Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title_fullStr | Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title_full_unstemmed | Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title_short | Ferroelectric stability of annealed PVDF-TrFE thin film incorporated with MgO nanofillers |
title_sort | ferroelectric stability of annealed pvdf trfe thin film incorporated with mgo nanofillers |
topic | QC Physics TK Electrical engineering. Electronics Nuclear engineering |
work_keys_str_mv | AT wahidmohamadhafizmohd ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT dahanrozanamohd ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT arshadadillahnurashikin ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT zulkeflehabibah ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT saadsitizaleha ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT mahmoodmohamadrusop ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT ganweechen ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers AT abdmajidwanhaliza ferroelectricstabilityofannealedpvdftrfethinfilmincorporatedwithmgonanofillers |