Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity

The ability of band offsets at multiferroic/metal and multiferroic/electrolyte interfaces in controlling charge transfer and thus altering the photoactivity performance has sparked significant attention in solar energy conversion applications. Here, we demonstrate that the band offsets of the two in...

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Main Authors: Tan, Kok Hong, Chen, Yun Wen, Van, Chien Nguyen, Wang, Hongliang, Chen, Jhih Wei, Lim, Fang Sheng, Chew, Khian Hooi, Zhan, Qian, Wu, Chung Lin, Chai, Siang Piao, Chu, Ying Hao, Chang, Wei Sea
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Published: American Chemical Society 2019
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_version_ 1796961795905159168
author Tan, Kok Hong
Chen, Yun Wen
Van, Chien Nguyen
Wang, Hongliang
Chen, Jhih Wei
Lim, Fang Sheng
Chew, Khian Hooi
Zhan, Qian
Wu, Chung Lin
Chai, Siang Piao
Chu, Ying Hao
Chang, Wei Sea
author_facet Tan, Kok Hong
Chen, Yun Wen
Van, Chien Nguyen
Wang, Hongliang
Chen, Jhih Wei
Lim, Fang Sheng
Chew, Khian Hooi
Zhan, Qian
Wu, Chung Lin
Chai, Siang Piao
Chu, Ying Hao
Chang, Wei Sea
author_sort Tan, Kok Hong
collection UM
description The ability of band offsets at multiferroic/metal and multiferroic/electrolyte interfaces in controlling charge transfer and thus altering the photoactivity performance has sparked significant attention in solar energy conversion applications. Here, we demonstrate that the band offsets of the two interfaces play the key role in determining charge transport direction in a downward self-polarized BFO film. Electrons tend to move to BFO/electrolyte interface for water reduction. Our experimental and first-principle calculations reveal that the presence of neodymium (Nd) dopants in BFO enhances the photoelectrochemical performance by reduction of the local electron-hole pair recombination sites and modulation of the band gap to improve the visible light absorption. This opens a promising route to the heterostructure design by modulating the band gap to promote efficient charge transfer. © 2018 American Chemical Society.
first_indexed 2024-03-06T05:59:29Z
format Article
id um.eprints-23303
institution Universiti Malaya
last_indexed 2024-03-06T05:59:29Z
publishDate 2019
publisher American Chemical Society
record_format dspace
spelling um.eprints-233032020-01-03T06:17:11Z http://eprints.um.edu.my/23303/ Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity Tan, Kok Hong Chen, Yun Wen Van, Chien Nguyen Wang, Hongliang Chen, Jhih Wei Lim, Fang Sheng Chew, Khian Hooi Zhan, Qian Wu, Chung Lin Chai, Siang Piao Chu, Ying Hao Chang, Wei Sea QC Physics TJ Mechanical engineering and machinery TP Chemical technology The ability of band offsets at multiferroic/metal and multiferroic/electrolyte interfaces in controlling charge transfer and thus altering the photoactivity performance has sparked significant attention in solar energy conversion applications. Here, we demonstrate that the band offsets of the two interfaces play the key role in determining charge transport direction in a downward self-polarized BFO film. Electrons tend to move to BFO/electrolyte interface for water reduction. Our experimental and first-principle calculations reveal that the presence of neodymium (Nd) dopants in BFO enhances the photoelectrochemical performance by reduction of the local electron-hole pair recombination sites and modulation of the band gap to improve the visible light absorption. This opens a promising route to the heterostructure design by modulating the band gap to promote efficient charge transfer. © 2018 American Chemical Society. American Chemical Society 2019 Article PeerReviewed Tan, Kok Hong and Chen, Yun Wen and Van, Chien Nguyen and Wang, Hongliang and Chen, Jhih Wei and Lim, Fang Sheng and Chew, Khian Hooi and Zhan, Qian and Wu, Chung Lin and Chai, Siang Piao and Chu, Ying Hao and Chang, Wei Sea (2019) Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity. ACS Applied Materials & Interfaces, 11 (1). pp. 1655-1664. ISSN 1944-8244, DOI https://doi.org/10.1021/acsami.8b17758 <https://doi.org/10.1021/acsami.8b17758>. https://doi.org/10.1021/acsami.8b17758 doi:10.1021/acsami.8b17758
spellingShingle QC Physics
TJ Mechanical engineering and machinery
TP Chemical technology
Tan, Kok Hong
Chen, Yun Wen
Van, Chien Nguyen
Wang, Hongliang
Chen, Jhih Wei
Lim, Fang Sheng
Chew, Khian Hooi
Zhan, Qian
Wu, Chung Lin
Chai, Siang Piao
Chu, Ying Hao
Chang, Wei Sea
Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title_full Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title_fullStr Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title_full_unstemmed Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title_short Energy Band Gap Modulation in Nd-Doped BiFeO3/SrRuO3 Heteroepitaxy for Visible Light Photoelectrochemical Activity
title_sort energy band gap modulation in nd doped bifeo3 srruo3 heteroepitaxy for visible light photoelectrochemical activity
topic QC Physics
TJ Mechanical engineering and machinery
TP Chemical technology
work_keys_str_mv AT tankokhong energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT chenyunwen energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT vanchiennguyen energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT wanghongliang energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT chenjhihwei energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT limfangsheng energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT chewkhianhooi energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT zhanqian energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT wuchunglin energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT chaisiangpiao energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT chuyinghao energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity
AT changweisea energybandgapmodulationinnddopedbifeo3srruo3heteroepitaxyforvisiblelightphotoelectrochemicalactivity