Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst

This paper investigates the effects of radiant heat from implementing a hot filament (HF) in an existing Plasma-enhanced Chemical Vapour Deposition (PECVD) system on the growth of transfer-free graphene. The fabrication and properties of the transfer-free graphene grown using the HF-PECVD technique...

Full description

Bibliographic Details
Main Authors: Othman, Maisara, Ritikos, Richard, Rahman, Saadah Abdul
Format: Article
Published: Elsevier 2019
Subjects:
_version_ 1825722124887654400
author Othman, Maisara
Ritikos, Richard
Rahman, Saadah Abdul
author_facet Othman, Maisara
Ritikos, Richard
Rahman, Saadah Abdul
author_sort Othman, Maisara
collection UM
description This paper investigates the effects of radiant heat from implementing a hot filament (HF) in an existing Plasma-enhanced Chemical Vapour Deposition (PECVD) system on the growth of transfer-free graphene. The fabrication and properties of the transfer-free graphene grown using the HF-PECVD technique with nickel (Ni) as a catalyst were compared to that of transfer-free graphene grown using the existing PECVD method. The Ni film was used as a catalyst to assist the formation of graphene at the Ni-substrate interface for both techniques. Instead of undergoing an additional Ni annealing process, an increase in deposition temperature was achieved from the radiant heat of the hot filament in the HF-PECVD, changing the Ni grain size from nano-sized to micro-sized and reducing the formation of Ni grain boundaries. The increase in Ni grain size and the reduction in the grain boundary formation promoted the formation of less defective graphene with a more ordered structure. The formation of well-ordered graphitic-structured graphene also corresponded to the disappearance of O contamination in the Ni catalyst due to the higher deposition temperature. The enhancement in the structure, morphology, and chemical bonding of the transfer-free graphene grown using the HF-PECVD technique resulted in improved electrical properties of the film. © 2019 Elsevier B.V.
first_indexed 2024-03-06T06:00:52Z
format Article
id um.eprints-23783
institution Universiti Malaya
last_indexed 2024-03-06T06:00:52Z
publishDate 2019
publisher Elsevier
record_format dspace
spelling um.eprints-237832020-02-13T03:01:23Z http://eprints.um.edu.my/23783/ Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst Othman, Maisara Ritikos, Richard Rahman, Saadah Abdul Q Science (General) QC Physics This paper investigates the effects of radiant heat from implementing a hot filament (HF) in an existing Plasma-enhanced Chemical Vapour Deposition (PECVD) system on the growth of transfer-free graphene. The fabrication and properties of the transfer-free graphene grown using the HF-PECVD technique with nickel (Ni) as a catalyst were compared to that of transfer-free graphene grown using the existing PECVD method. The Ni film was used as a catalyst to assist the formation of graphene at the Ni-substrate interface for both techniques. Instead of undergoing an additional Ni annealing process, an increase in deposition temperature was achieved from the radiant heat of the hot filament in the HF-PECVD, changing the Ni grain size from nano-sized to micro-sized and reducing the formation of Ni grain boundaries. The increase in Ni grain size and the reduction in the grain boundary formation promoted the formation of less defective graphene with a more ordered structure. The formation of well-ordered graphitic-structured graphene also corresponded to the disappearance of O contamination in the Ni catalyst due to the higher deposition temperature. The enhancement in the structure, morphology, and chemical bonding of the transfer-free graphene grown using the HF-PECVD technique resulted in improved electrical properties of the film. © 2019 Elsevier B.V. Elsevier 2019 Article PeerReviewed Othman, Maisara and Ritikos, Richard and Rahman, Saadah Abdul (2019) Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst. Thin Solid Films, 685. pp. 335-342. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2019.06.045 <https://doi.org/10.1016/j.tsf.2019.06.045>. https://doi.org/10.1016/j.tsf.2019.06.045 doi:10.1016/j.tsf.2019.06.045
spellingShingle Q Science (General)
QC Physics
Othman, Maisara
Ritikos, Richard
Rahman, Saadah Abdul
Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title_full Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title_fullStr Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title_full_unstemmed Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title_short Growth of plasma-enhanced chemical vapour deposition and hot filament plasma-enhanced chemical vapour deposition transfer-free graphene using a nickel catalyst
title_sort growth of plasma enhanced chemical vapour deposition and hot filament plasma enhanced chemical vapour deposition transfer free graphene using a nickel catalyst
topic Q Science (General)
QC Physics
work_keys_str_mv AT othmanmaisara growthofplasmaenhancedchemicalvapourdepositionandhotfilamentplasmaenhancedchemicalvapourdepositiontransferfreegrapheneusinganickelcatalyst
AT ritikosrichard growthofplasmaenhancedchemicalvapourdepositionandhotfilamentplasmaenhancedchemicalvapourdepositiontransferfreegrapheneusinganickelcatalyst
AT rahmansaadahabdul growthofplasmaenhancedchemicalvapourdepositionandhotfilamentplasmaenhancedchemicalvapourdepositiontransferfreegrapheneusinganickelcatalyst