Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer
In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable...
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| Format: | Article |
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Nature Research
2019
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| author | Ooi, Poh Choon Mohammad Haniff, Muhammad Aniq Shazni Mohd Razip Wee, M.F. Goh, Boon Tong Dee, Chang Fu Mohamed, Mohd Ambri Majlis, Burhanuddin Yeop |
| author_facet | Ooi, Poh Choon Mohammad Haniff, Muhammad Aniq Shazni Mohd Razip Wee, M.F. Goh, Boon Tong Dee, Chang Fu Mohamed, Mohd Ambri Majlis, Burhanuddin Yeop |
| author_sort | Ooi, Poh Choon |
| collection | UM |
| description | In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device. © 2019, The Author(s). |
| first_indexed | 2024-03-06T06:00:53Z |
| format | Article |
| id | um.eprints-23788 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T06:00:53Z |
| publishDate | 2019 |
| publisher | Nature Research |
| record_format | dspace |
| spelling | um.eprints-237882020-02-14T02:19:29Z http://eprints.um.edu.my/23788/ Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer Ooi, Poh Choon Mohammad Haniff, Muhammad Aniq Shazni Mohd Razip Wee, M.F. Goh, Boon Tong Dee, Chang Fu Mohamed, Mohd Ambri Majlis, Burhanuddin Yeop Q Science (General) QC Physics In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device. © 2019, The Author(s). Nature Research 2019 Article PeerReviewed Ooi, Poh Choon and Mohammad Haniff, Muhammad Aniq Shazni and Mohd Razip Wee, M.F. and Goh, Boon Tong and Dee, Chang Fu and Mohamed, Mohd Ambri and Majlis, Burhanuddin Yeop (2019) Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer. Scientific Reports, 9 (1). p. 6761. ISSN 2045-2322, DOI https://doi.org/10.1038/s41598-019-43279-3 <https://doi.org/10.1038/s41598-019-43279-3>. https://doi.org/10.1038/s41598-019-43279-3 doi:10.1038/s41598-019-43279-3 |
| spellingShingle | Q Science (General) QC Physics Ooi, Poh Choon Mohammad Haniff, Muhammad Aniq Shazni Mohd Razip Wee, M.F. Goh, Boon Tong Dee, Chang Fu Mohamed, Mohd Ambri Majlis, Burhanuddin Yeop Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title | Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title_full | Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title_fullStr | Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title_full_unstemmed | Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title_short | Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| title_sort | electrical transportation mechanisms of molybdenum disulfide flakes graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer |
| topic | Q Science (General) QC Physics |
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