A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power
This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 mm2 for 4G and 5G applications covering the lower frequency band of 700-800 MHz. A novel linearizer circuit is integrated...
Main Authors: | Nitesh, Ram Sharma, Rajendran, Jagadheswaran, Ramiah, Harikrishnan, Yarman, Binboga Siddik |
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Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers
2019
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Subjects: |
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