In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow
In this work, we report that the properties of Sn-doped In 2 O 3 (ITO) can be properly tuned by varying Argon/ Oxygen (Ar/O 2 ) percentage during the sputtering process from 7% O 2 to 93% O 2 . The characteristics of the ITO grown in oxygen deficient to the oxygen-rich condition are properly studied...
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| Format: | Article |
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Elsevier
2019
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| _version_ | 1796961911828381696 |
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| author | Najwa, S. Shuhaimi, Ahmad Talik, Noor Azrina Ameera, N. Sobri, M. Rusop, Mohamad |
| author_facet | Najwa, S. Shuhaimi, Ahmad Talik, Noor Azrina Ameera, N. Sobri, M. Rusop, Mohamad |
| author_sort | Najwa, S. |
| collection | UM |
| description | In this work, we report that the properties of Sn-doped In 2 O 3 (ITO) can be properly tuned by varying Argon/ Oxygen (Ar/O 2 ) percentage during the sputtering process from 7% O 2 to 93% O 2 . The characteristics of the ITO grown in oxygen deficient to the oxygen-rich condition are properly studied. It is found that there is a strong correlation between the concentration incorporation of oxygen with the properties of ITO films. ITO films were grown in oxygen deficient condition (7% O 2 ) resulted in a rougher surface, wider band gap, and lower resistivity compared to the other films grown with 33%, 67%, and 93%. Blue shifts in absorbance edge and band gap widening indicate that the number of carrier concentration was also changed linearly with the presence of oxygen in the film. These findings provide a simple way to effectively tune the properties of ITO films for ITO to be applied in optoelectronics, power device as well as sensor applications. © 2019 Elsevier B.V. |
| first_indexed | 2024-03-06T06:01:11Z |
| format | Article |
| id | um.eprints-23894 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T06:01:11Z |
| publishDate | 2019 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-238942020-02-28T01:08:49Z http://eprints.um.edu.my/23894/ In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow Najwa, S. Shuhaimi, Ahmad Talik, Noor Azrina Ameera, N. Sobri, M. Rusop, Mohamad Q Science (General) QC Physics In this work, we report that the properties of Sn-doped In 2 O 3 (ITO) can be properly tuned by varying Argon/ Oxygen (Ar/O 2 ) percentage during the sputtering process from 7% O 2 to 93% O 2 . The characteristics of the ITO grown in oxygen deficient to the oxygen-rich condition are properly studied. It is found that there is a strong correlation between the concentration incorporation of oxygen with the properties of ITO films. ITO films were grown in oxygen deficient condition (7% O 2 ) resulted in a rougher surface, wider band gap, and lower resistivity compared to the other films grown with 33%, 67%, and 93%. Blue shifts in absorbance edge and band gap widening indicate that the number of carrier concentration was also changed linearly with the presence of oxygen in the film. These findings provide a simple way to effectively tune the properties of ITO films for ITO to be applied in optoelectronics, power device as well as sensor applications. © 2019 Elsevier B.V. Elsevier 2019 Article PeerReviewed Najwa, S. and Shuhaimi, Ahmad and Talik, Noor Azrina and Ameera, N. and Sobri, M. and Rusop, Mohamad (2019) In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow. Applied Surface Science, 479. pp. 1220-1225. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2019.01.123 <https://doi.org/10.1016/j.apsusc.2019.01.123>. https://doi.org/10.1016/j.apsusc.2019.01.123 doi:10.1016/j.apsusc.2019.01.123 |
| spellingShingle | Q Science (General) QC Physics Najwa, S. Shuhaimi, Ahmad Talik, Noor Azrina Ameera, N. Sobri, M. Rusop, Mohamad In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title | In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title_full | In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title_fullStr | In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title_full_unstemmed | In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title_short | In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow |
| title_sort | in situ tuning of sn doped in2o3 ito films properties by controlling deposition argon oxygen flow |
| topic | Q Science (General) QC Physics |
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