Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34...
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| Format: | Article |
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AIP Publishing
2020
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| author | Yeoh, Keat Hoe Chew, Khian Hooi Yoon, Tiem Leong Rusi, - Ong, Duu Sheng |
| author_facet | Yeoh, Keat Hoe Chew, Khian Hooi Yoon, Tiem Leong Rusi, - Ong, Duu Sheng |
| author_sort | Yeoh, Keat Hoe |
| collection | UM |
| description | Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34. While the pristine GaN 2D structures are intrinsically semiconducting, the 2D GaN with VGa defects under tensile/compressive biaxial strains is metallic, except at a high compressive strain of 6%. In addition, the 2D GaN exhibits a strain-tunable magnetic property by introducing the VGa defects, where the magnetic moment can be modulated by applying a biaxial strain on the material. A compressive strain larger than 2% tends to suppress the magnetic effect. A drastic reduction of the total magnetization from 2.21 μ B to 0.16 μ B is clearly visible for a lower VGa concentration of θ = 1 / 62. On the other hand, the 2D GaN with VN defects is nonmagnetic, and this behavior is not affected by the biaxial strain. © 2020 Author(s). |
| first_indexed | 2024-03-06T06:03:22Z |
| format | Article |
| id | um.eprints-24654 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T06:03:22Z |
| publishDate | 2020 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | um.eprints-246542020-06-04T04:09:07Z http://eprints.um.edu.my/24654/ Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects Yeoh, Keat Hoe Chew, Khian Hooi Yoon, Tiem Leong Rusi, - Ong, Duu Sheng Q Science (General) QC Physics Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34. While the pristine GaN 2D structures are intrinsically semiconducting, the 2D GaN with VGa defects under tensile/compressive biaxial strains is metallic, except at a high compressive strain of 6%. In addition, the 2D GaN exhibits a strain-tunable magnetic property by introducing the VGa defects, where the magnetic moment can be modulated by applying a biaxial strain on the material. A compressive strain larger than 2% tends to suppress the magnetic effect. A drastic reduction of the total magnetization from 2.21 μ B to 0.16 μ B is clearly visible for a lower VGa concentration of θ = 1 / 62. On the other hand, the 2D GaN with VN defects is nonmagnetic, and this behavior is not affected by the biaxial strain. © 2020 Author(s). AIP Publishing 2020 Article PeerReviewed Yeoh, Keat Hoe and Chew, Khian Hooi and Yoon, Tiem Leong and Rusi, - and Ong, Duu Sheng (2020) Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects. Journal of Applied Physics, 127 (1). 015305. ISSN 0021-8979, DOI https://doi.org/10.1063/1.5132417 <https://doi.org/10.1063/1.5132417>. https://doi.org/10.1063/1.5132417 doi:10.1063/1.5132417 |
| spellingShingle | Q Science (General) QC Physics Yeoh, Keat Hoe Chew, Khian Hooi Yoon, Tiem Leong Rusi, - Ong, Duu Sheng Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title | Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title_full | Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title_fullStr | Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title_full_unstemmed | Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title_short | Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects |
| title_sort | strain tunable electronic and magnetic properties of two dimensional gallium nitride with vacancy defects |
| topic | Q Science (General) QC Physics |
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