Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects
Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34...
| Main Authors: | , , , , |
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| Format: | Article |
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AIP Publishing
2020
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