Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples
The spread profile of potassium-permanganate (KMnO(4)) dye on a porous pre-sintered silica layer deposited via Flame Hydrolysis Deposition is presented. The work is aimed at controlling the dopant profile on the resulting glass layer for optically passive and active devices integration. KMnO(4) is u...
| Main Authors: | , , , , , , , |
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| Format: | Article |
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Elsevier
2009
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| _version_ | 1825718979639902208 |
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| author | Leong, W.C. Tho, S.Y. Law, A.W.P. Chong, W.Y. Pua, C.H. Ahmad, Harith Haseeb, A.S. Md. Abdul Adikan, Faisal Rafiq Mahamd |
| author_facet | Leong, W.C. Tho, S.Y. Law, A.W.P. Chong, W.Y. Pua, C.H. Ahmad, Harith Haseeb, A.S. Md. Abdul Adikan, Faisal Rafiq Mahamd |
| author_sort | Leong, W.C. |
| collection | UM |
| description | The spread profile of potassium-permanganate (KMnO(4)) dye on a porous pre-sintered silica layer deposited via Flame Hydrolysis Deposition is presented. The work is aimed at controlling the dopant profile on the resulting glass layer for optically passive and active devices integration. KMnO(4) is used as it allows visual qualification of its spread on the soot layer. Pre-sintered silica layers allow for application of dopants into the glass matrix via adsorption and pore retention. Selective area doping is achieved by applying specific volumes of the dye onto pre-selected areas on the sample using a micropipette. Higher dye volumes applied would result in larger spread diameters. Furthermore, control of the spread is possible by heating the sample during the application of the dye. (C) 2009 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-06T05:12:38Z |
| format | Article |
| id | um.eprints-4678 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:12:38Z |
| publishDate | 2009 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-46782018-10-11T01:48:16Z http://eprints.um.edu.my/4678/ Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples Leong, W.C. Tho, S.Y. Law, A.W.P. Chong, W.Y. Pua, C.H. Ahmad, Harith Haseeb, A.S. Md. Abdul Adikan, Faisal Rafiq Mahamd TK Electrical engineering. Electronics Nuclear engineering The spread profile of potassium-permanganate (KMnO(4)) dye on a porous pre-sintered silica layer deposited via Flame Hydrolysis Deposition is presented. The work is aimed at controlling the dopant profile on the resulting glass layer for optically passive and active devices integration. KMnO(4) is used as it allows visual qualification of its spread on the soot layer. Pre-sintered silica layers allow for application of dopants into the glass matrix via adsorption and pore retention. Selective area doping is achieved by applying specific volumes of the dye onto pre-selected areas on the sample using a micropipette. Higher dye volumes applied would result in larger spread diameters. Furthermore, control of the spread is possible by heating the sample during the application of the dye. (C) 2009 Elsevier B.V. All rights reserved. Elsevier 2009 Article PeerReviewed Leong, W.C. and Tho, S.Y. and Law, A.W.P. and Chong, W.Y. and Pua, C.H. and Ahmad, Harith and Haseeb, A.S. Md. Abdul and Adikan, Faisal Rafiq Mahamd (2009) Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples. Thin Solid Films, 518 (1). pp. 378-382. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2009.06.060 <https://doi.org/10.1016/j.tsf.2009.06.060>. https://doi.org/10.1016/j.tsf.2009.06.060 doi:10.1016/j.tsf.2009.06.060 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Leong, W.C. Tho, S.Y. Law, A.W.P. Chong, W.Y. Pua, C.H. Ahmad, Harith Haseeb, A.S. Md. Abdul Adikan, Faisal Rafiq Mahamd Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title | Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title_full | Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title_fullStr | Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title_full_unstemmed | Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title_short | Spreading profile of dopant solution on pre-sintered silica layers for selective area doping of integrated optic planar glass samples |
| title_sort | spreading profile of dopant solution on pre sintered silica layers for selective area doping of integrated optic planar glass samples |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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