Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) tran...

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Bibliographic Details
Main Authors:	Adikan, Faisal Rafiq Mahamd, Mahdi, M.A., Thirumeni, S., Poopalan, Prabakaran, Dimyati, Kaharudin, Ahmad, Harith
Format:	Article
Published:	John Wiley & Sons 2001
Subjects:	TK Electrical engineering. Electronics Nuclear engineering

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