Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films

Hydrogenated amorphous silicon (a-Si:H) thin films deposited by radio-frequency plasma enhanced chemical vapor deposition were irradiated by an energetic argon ion beam source from a 3.3 kJ Mather type dense plasma focus device. The effect of the energetic ion beam irradiation on the structural and...

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Main Authors: Goh, Boon Tong, Ngoi, Siew Kien, Yap, S.L., Wong, C.S., Rahman, Saadah Abdul
Format: Article
Published: 2013
Subjects:
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author Goh, Boon Tong
Ngoi, Siew Kien
Yap, S.L.
Wong, C.S.
Rahman, Saadah Abdul
author_facet Goh, Boon Tong
Ngoi, Siew Kien
Yap, S.L.
Wong, C.S.
Rahman, Saadah Abdul
author_sort Goh, Boon Tong
collection UM
description Hydrogenated amorphous silicon (a-Si:H) thin films deposited by radio-frequency plasma enhanced chemical vapor deposition were irradiated by an energetic argon ion beam source from a 3.3 kJ Mather type dense plasma focus device. The effect of the energetic ion beam irradiation on the structural and optical properties of a-Si:H thin films has been studied. The results show that irradiation of the energetic ion beam leads to the formation of Si nano-crystallites embedded within the amorphous matrix. This significantly improves the optical properties of the films, which include widening of the optical band gap and exhibiting wide range of photoluminescence (PL) emission spectra at room temperature. The correlations of the PL peak energy and intensity with the optical energy gap and crystalline volume fraction in the variation of number of shots are discussed.
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spelling um.eprints-73332014-12-12T02:12:26Z http://eprints.um.edu.my/7333/ Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films Goh, Boon Tong Ngoi, Siew Kien Yap, S.L. Wong, C.S. Rahman, Saadah Abdul QC Physics Hydrogenated amorphous silicon (a-Si:H) thin films deposited by radio-frequency plasma enhanced chemical vapor deposition were irradiated by an energetic argon ion beam source from a 3.3 kJ Mather type dense plasma focus device. The effect of the energetic ion beam irradiation on the structural and optical properties of a-Si:H thin films has been studied. The results show that irradiation of the energetic ion beam leads to the formation of Si nano-crystallites embedded within the amorphous matrix. This significantly improves the optical properties of the films, which include widening of the optical band gap and exhibiting wide range of photoluminescence (PL) emission spectra at room temperature. The correlations of the PL peak energy and intensity with the optical energy gap and crystalline volume fraction in the variation of number of shots are discussed. 2013 Article PeerReviewed Goh, Boon Tong and Ngoi, Siew Kien and Yap, S.L. and Wong, C.S. and Rahman, Saadah Abdul (2013) Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films. Thin Solid Films, 529. pp. 159-163. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2012.07.072 <https://doi.org/10.1016/j.tsf.2012.07.072>. 10.1016/j.tsf.2012.07.072
spellingShingle QC Physics
Goh, Boon Tong
Ngoi, Siew Kien
Yap, S.L.
Wong, C.S.
Rahman, Saadah Abdul
Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title_full Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title_fullStr Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title_full_unstemmed Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title_short Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films
title_sort effect of energetic ion beam irradiation on structural and optical properties of a si h thin films
topic QC Physics
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