Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD
Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD s...
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| Format: | Article |
| Language: | English |
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2004
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| Online Access: | http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf |
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| author | Seck, Chai Lim Boon, Tong Goh Abdul, Rahman Saadah |
| author_facet | Seck, Chai Lim Boon, Tong Goh Abdul, Rahman Saadah |
| author_sort | Seck, Chai Lim |
| collection | UM |
| description | Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD system was developed from a modification of the existing d.c. PECVD system with a modulation frequency of 10 kHz. The ON-time and OFF-time was set at 30 seconds. In this work, the effects of anneal ing on the electro-optical properties of films prepared by both techniques at these flow-rates were investigated. These films were analyzed using optical absorption spectroscopy technique. The results showed that annealing had significant effects on electro-optical properties of these films at annealing temperatures above 300 degree Celsius mainly due the evolution of hydrogen. The silane flow-rate and the deposition technique also influenced the effects of annealing on the electro-optical properties of these films. |
| first_indexed | 2024-03-06T05:18:32Z |
| format | Article |
| id | um.eprints-7345 |
| institution | Universiti Malaya |
| language | English |
| last_indexed | 2024-03-06T05:18:32Z |
| publishDate | 2004 |
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| spelling | um.eprints-73452013-07-15T06:56:01Z http://eprints.um.edu.my/7345/ Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD Seck, Chai Lim Boon, Tong Goh Abdul, Rahman Saadah QC Physics Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD system was developed from a modification of the existing d.c. PECVD system with a modulation frequency of 10 kHz. The ON-time and OFF-time was set at 30 seconds. In this work, the effects of anneal ing on the electro-optical properties of films prepared by both techniques at these flow-rates were investigated. These films were analyzed using optical absorption spectroscopy technique. The results showed that annealing had significant effects on electro-optical properties of these films at annealing temperatures above 300 degree Celsius mainly due the evolution of hydrogen. The silane flow-rate and the deposition technique also influenced the effects of annealing on the electro-optical properties of these films. 2004 Article PeerReviewed application/pdf en http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf Seck, Chai Lim and Boon, Tong Goh and Abdul, Rahman Saadah (2004) Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD. Solid State Science and Technology, 12 (1). pp. 59-64. |
| spellingShingle | QC Physics Seck, Chai Lim Boon, Tong Goh Abdul, Rahman Saadah Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title | Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title_full | Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title_fullStr | Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title_full_unstemmed | Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title_short | Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD |
| title_sort | effects of annealing on the electro optical properties of a si h thin films deposited by d c and pulsed pecvd |
| topic | QC Physics |
| url | http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf |
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