Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer
Organic memory-transistor devices were fabricated from pentacene-based organic thin-film transistors (OTFTs) with a fullerene layer. The current-voltage (I-V) characteristics show that the fabricated OTFTs exhibit a unipolar property with p-channel characteristics. The fabricated OTFTs devices exhib...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Surface Science Society of Japan
2009
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| Online Access: | https://eprints.ums.edu.my/id/eprint/19051/1/Bias%20stress%20and%20memory%20effect%20in%20pentacene.pdf |
| _version_ | 1796909794404073472 |
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| author | Khairul Anuar Mohamad Shinya Yamada Katsuhiro Uesugi Hisashi Fukuda |
| author_facet | Khairul Anuar Mohamad Shinya Yamada Katsuhiro Uesugi Hisashi Fukuda |
| author_sort | Khairul Anuar Mohamad |
| collection | UMS |
| description | Organic memory-transistor devices were fabricated from pentacene-based organic thin-film transistors (OTFTs) with a fullerene layer. The current-voltage (I-V) characteristics show that the fabricated OTFTs exhibit a unipolar property with p-channel characteristics. The fabricated OTFTs devices exhibit a threshold voltage shift upon the application of positive and negative bias. Under the effect of positive bias, the on state was induced and a ΔVth = 12.9 V was obtained. Meanwhile, the threshold voltage was reversibly shifted by ΔVth = 9.1 V under the effect of negative bias and the off state was induced. Upon the effect of bias, the carrier mobility of fabricated OTFTs is almost similar in both on and off states. Pentacene-based OTFTs without a fullerene layer for memory effect was demonstrated for comparison. The memory effect is mainly attributed to the fullerene layer. |
| first_indexed | 2024-03-06T02:54:54Z |
| format | Article |
| id | ums.eprints-19051 |
| institution | Universiti Malaysia Sabah |
| language | English |
| last_indexed | 2024-03-06T02:54:54Z |
| publishDate | 2009 |
| publisher | Surface Science Society of Japan |
| record_format | dspace |
| spelling | ums.eprints-190512018-03-06T00:33:49Z https://eprints.ums.edu.my/id/eprint/19051/ Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer Khairul Anuar Mohamad Shinya Yamada Katsuhiro Uesugi Hisashi Fukuda TK Electrical engineering. Electronics Nuclear engineering Organic memory-transistor devices were fabricated from pentacene-based organic thin-film transistors (OTFTs) with a fullerene layer. The current-voltage (I-V) characteristics show that the fabricated OTFTs exhibit a unipolar property with p-channel characteristics. The fabricated OTFTs devices exhibit a threshold voltage shift upon the application of positive and negative bias. Under the effect of positive bias, the on state was induced and a ΔVth = 12.9 V was obtained. Meanwhile, the threshold voltage was reversibly shifted by ΔVth = 9.1 V under the effect of negative bias and the off state was induced. Upon the effect of bias, the carrier mobility of fabricated OTFTs is almost similar in both on and off states. Pentacene-based OTFTs without a fullerene layer for memory effect was demonstrated for comparison. The memory effect is mainly attributed to the fullerene layer. Surface Science Society of Japan 2009 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/19051/1/Bias%20stress%20and%20memory%20effect%20in%20pentacene.pdf Khairul Anuar Mohamad and Shinya Yamada and Katsuhiro Uesugi and Hisashi Fukuda (2009) Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer. e-Journal of Surface Science and Nanotechnology, 7. pp. 808-812. ISSN 1348-0391 https://doi.org/10.1380/ejssnt.2009.808 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Khairul Anuar Mohamad Shinya Yamada Katsuhiro Uesugi Hisashi Fukuda Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title | Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title_full | Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title_fullStr | Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title_full_unstemmed | Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title_short | Bias stress and memory effect in pentacene-based organic thin-film transistors with a fullerene layer |
| title_sort | bias stress and memory effect in pentacene based organic thin film transistors with a fullerene layer |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | https://eprints.ums.edu.my/id/eprint/19051/1/Bias%20stress%20and%20memory%20effect%20in%20pentacene.pdf |
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