Formation of air-gap structure at a GaN epilayer/substrate interface by using an InN interlayer
We propose a new technique for “air‐gap” formation at a GaN/sapphire interface by using an InN interlayer. This is aimed to grow epitaxial GaN films with reduced stress and cracks. First, an InN interlayer of about 0.2 μm thick is grown at 600 °C in atmospheric pressure. Then a 30 nm‐thick GaN buffe...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
John Wiley & Sons Ltd
2003
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/19859/1/Formation%20of%20air.pdf |