| Summary: | Recent years have been rapid acceleration in the research and development of organic semiconductor transistors as key components for innovative nanoelectronic devices. The understanding of the unique properties that characterize these potentially high-performance materials holds great promise filling niches not occupied by inorganic devices. The research aim to develop a fundamental-based modeling organic semiconductor field-effect transistors in accordance to the ballistics carrier transport phenomenon. The organic transistor was designed and simulated using Sentaurus TCAD tools and parameter extractions were carried-out using MATLAB. Hoping transport model was used in the simulation. Output and transfer characteristics were obtained to estimate on effects of contact resistance and mobility in organic field-effect transistors (OFETs) in vary temperature range. In the linear region, the model of contact resistance is taken account into the extraction of modified mobility. The modified mobility obtained higher than the common linear mobility, which reflects the ballistics transport. Moreover, a method to estimate the effects of Meyer-Neldel Rule (MNR) for charge transport mobility was investigated at varies temperature range and the mobility is to be found thermally activated with activation energies.
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