Emerging nanoelectronics device design exploration incorporating vertical impact-ionization mosfet and strained (SiGe) technology
Miniaturization of semiconductor devices beyond sub-lO0nm has commenced several problems for further scaling. Low subthreshold voltage, reduced carrier mobility, and increased leakage currents were identified to be the paramount issues that leads to high power consumption and heating. The Impact Ion...
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| Format: | Research Report |
| Language: | English |
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Universiti Malaysia Sabah
2013
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| Online Access: | https://eprints.ums.edu.my/id/eprint/24974/1/Emerging%20nanoelectronics%20device%20design%20exploration%20incorporating%20vertical%20impact-ionization%20mosfet%20and%20strained%20%28SiGe%29%20technology.pdf |