Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation
We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect trans...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
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2014
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| Online Access: | https://eprints.ums.edu.my/id/eprint/30306/1/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/30306/2/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20FULL%20TEXT.pdf |
| _version_ | 1796910836424376320 |
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| author | Umar Farok Yona Falinie Afishah Alias Bablu Kumar Ghosh Ismail Saad Ahmad Mukifza Harun Khairul Anuar Mohamad |
| author_facet | Umar Farok Yona Falinie Afishah Alias Bablu Kumar Ghosh Ismail Saad Ahmad Mukifza Harun Khairul Anuar Mohamad |
| author_sort | Umar Farok |
| collection | UMS |
| description | We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm2/Vs with increasing source-drain voltage (average mobility was 0.0254 cm2/Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon. |
| first_indexed | 2024-03-06T03:10:12Z |
| format | Conference or Workshop Item |
| id | ums.eprints-30306 |
| institution | Universiti Malaysia Sabah |
| language | English English |
| last_indexed | 2024-03-06T03:10:12Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ums.eprints-303062021-09-06T05:17:17Z https://eprints.ums.edu.my/id/eprint/30306/ Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation Umar Farok Yona Falinie Afishah Alias Bablu Kumar Ghosh Ismail Saad Ahmad Mukifza Harun Khairul Anuar Mohamad TK7885-7895 Computer engineering. Computer hardware We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm2/Vs with increasing source-drain voltage (average mobility was 0.0254 cm2/Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon. 2014 Conference or Workshop Item PeerReviewed text en https://eprints.ums.edu.my/id/eprint/30306/1/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20ABSTRACT.pdf text en https://eprints.ums.edu.my/id/eprint/30306/2/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20FULL%20TEXT.pdf Umar Farok and Yona Falinie and Afishah Alias and Bablu Kumar Ghosh and Ismail Saad and Ahmad Mukifza Harun and Khairul Anuar Mohamad (2014) Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation. In: 2013 1st International Conference on Artificial Intelligence, Modelling and Simulation, 3-5 December 2013, Kota Kinabalu, Malaysia. https://ieeexplore.ieee.org/abstract/document/6959961/authors#authors |
| spellingShingle | TK7885-7895 Computer engineering. Computer hardware Umar Farok Yona Falinie Afishah Alias Bablu Kumar Ghosh Ismail Saad Ahmad Mukifza Harun Khairul Anuar Mohamad Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title | Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title_full | Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title_fullStr | Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title_full_unstemmed | Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title_short | Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation |
| title_sort | electrical characterization and source drain voltage dependent mobility of p channel organic field effect transistors using matlab simulation |
| topic | TK7885-7895 Computer engineering. Computer hardware |
| url | https://eprints.ums.edu.my/id/eprint/30306/1/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/30306/2/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20FULL%20TEXT.pdf |
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