Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength
This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...
| Үндсэн зохиолчид: | , , , , , , , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English English |
| Хэвлэсэн: |
Elsevier
2022
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdf https://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf |
Интернэт
https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdfhttps://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf