Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength

Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength

This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...

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Bibliographic Details
Main Authors: Megat Muhammad Ikhsan Megat Hasnan, M.S. Nordin, N. Nayan, K.A. Mohamad, N.F. Basri, A. Alias, Vicker, A.J., I.M. Noor
Format: Article
Language:English
English
Published: Elsevier 2022
Subjects:
QC1-999 Physics
Online Access:https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdf
https://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf

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