Design and simulation of Vertical Strained SiGe Impact Ionization Mosfet (VESIMOS)
Miniaturization of semiconductor devices beyond sub-100nm has commenced several problems for further scaling. Low subthreshold voltage, reduced carrier mobility, and increased leakage currents were identified to be the paramount issues that leads to high power consumption and heating. The Impact Ion...
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| Format: | Thesis |
| Language: | English English |
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2011
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| Online Access: | https://eprints.ums.edu.my/id/eprint/42514/2/24%20PAGES.pdf https://eprints.ums.edu.my/id/eprint/42514/1/FULLTEXT.pdf |