Performance design and simulation analysis of vertical double gate MOSFET (VDGM)
Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, L g = 50nm and analyzing its effect towards such small devices was successfully performed. The...
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| Format: | Conference or Workshop Item |
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2011
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| _version_ | 1825713132769640448 |
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| author | Ismail Saad Nurmin Bolong Divya, P. Teo, Kenneth Tze Kin |
| author_facet | Ismail Saad Nurmin Bolong Divya, P. Teo, Kenneth Tze Kin |
| author_sort | Ismail Saad |
| collection | UMS |
| description | Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, L g = 50nm and analyzing its effect towards such small devices was successfully performed. The analysis continued with the comparative investigation of device performance with conventional planar MOSFET as scaling L g down to 50nm. The final part evaluates the innovative design of incorporating dielectric pocket (DP) on top of vertical MOSFET turret with comprehensive device performance analysis as compared to standard vertical MOSFET in nano scale realm. An optimized body doping for enhanced performance of vertical MOSFET was revealed. The vicinity of DP near the drain end is found to reduce the charge sharing effects between source and drain that gives better gate control of the depletion region for short channel effect (SCE) suppression in nanodevice structure. |
| first_indexed | 2025-03-05T00:48:43Z |
| format | Conference or Workshop Item |
| id | ums.eprints-5093 |
| institution | Universiti Malaysia Sabah |
| last_indexed | 2025-03-05T00:48:43Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ums.eprints-50932014-12-30T01:39:43Z https://eprints.ums.edu.my/id/eprint/5093/ Performance design and simulation analysis of vertical double gate MOSFET (VDGM) Ismail Saad Nurmin Bolong Divya, P. Teo, Kenneth Tze Kin TK Electrical engineering. Electronics Nuclear engineering Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. The body doping effect on vertical channel for channel length, L g = 50nm and analyzing its effect towards such small devices was successfully performed. The analysis continued with the comparative investigation of device performance with conventional planar MOSFET as scaling L g down to 50nm. The final part evaluates the innovative design of incorporating dielectric pocket (DP) on top of vertical MOSFET turret with comprehensive device performance analysis as compared to standard vertical MOSFET in nano scale realm. An optimized body doping for enhanced performance of vertical MOSFET was revealed. The vicinity of DP near the drain end is found to reduce the charge sharing effects between source and drain that gives better gate control of the depletion region for short channel effect (SCE) suppression in nanodevice structure. 2011 Conference or Workshop Item PeerReviewed Ismail Saad and Nurmin Bolong and Divya, P. and Teo, Kenneth Tze Kin (2011) Performance design and simulation analysis of vertical double gate MOSFET (VDGM). In: UKSim 13th International Conference on Modelling and Simulation, UKSim 2011, 30 Macrh - 1 April 2011, Cambridge, UK.. http://dx.doi.org/10.1109/UKSIM.2011.105 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ismail Saad Nurmin Bolong Divya, P. Teo, Kenneth Tze Kin Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title | Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title_full | Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title_fullStr | Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title_full_unstemmed | Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title_short | Performance design and simulation analysis of vertical double gate MOSFET (VDGM) |
| title_sort | performance design and simulation analysis of vertical double gate mosfet vdgm |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
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