Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization
The escalating demands in energy conversion necessitate the evolution of efficient power electronic devices beyond the limitations of traditional silicon (Si) counterparts. This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN...
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| Format: | Article |
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Elsevier Ltd
2024
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