| Summary: | This work examines the effects of the Copper Indium Gallium Selenide (CIGS) absorber layer on the performance of a CIGS
photovoltaic cell through numerical simulation using Analysis of Microelectronic and Photonic Structure – 1Dimensional (AMPS – 1D)
software. The band gap energy and thickness of the CIGS absorber layer were varied while keeping the other properties, such as carrier
concentration of the CdS buffer and ZnO window layers, constant. The optimum value obtained for the band gap energy of the CIGS
absorber layer was 1.2 eV, while the thickness was 2500 nm. These optimum values were used to simulate the optimum CIGS solar cell
with 83.2% fill factor, 0.718 V open circuit voltage, 28.8 mA/cm2
short circuit current density, and conversion efficiency of 17.197%.
|
|---|