SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency
The advancement of renewable energy sources necessitates the development of effective power electronic devices. Enhancement-mode Gallium Nitride (E-GaN) high-electronmobility transistors (HEMTs), an emerging wide-bandgap semiconductor device, demonstrate potential in photovoltaic (PV) energy convert...
| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Makale |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Universiti Putra Malaysia Press
2024
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| Online Erişim: | http://psasir.upm.edu.my/id/eprint/113546/1/113546.pdf |
| _version_ | 1825940339985219584 |
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| author | Liu, Xinzhi Shafie, Suhaidi Mohd Radzi, Mohd Amran Azis, Norhafiz Norddin, Nurbahirah Lawal, Ismail Zulkifli, Normaziah Abdul Karim, Abdul Hafiz |
| author_facet | Liu, Xinzhi Shafie, Suhaidi Mohd Radzi, Mohd Amran Azis, Norhafiz Norddin, Nurbahirah Lawal, Ismail Zulkifli, Normaziah Abdul Karim, Abdul Hafiz |
| author_sort | Liu, Xinzhi |
| collection | UPM |
| description | The advancement of renewable energy sources necessitates the development of effective power electronic devices. Enhancement-mode Gallium Nitride (E-GaN) high-electronmobility transistors (HEMTs), an emerging wide-bandgap semiconductor device, demonstrate potential in photovoltaic (PV) energy converting applications to enhance power transfer efficiency. This paper discusses the enhanced semiconducting characteristics of GaN HEMT over conventional silicon power devices by analyzing spontaneous and piezoelectric polarizations of wurtzite GaN crystalline structure and the formation of two-dimensional electron gas (2DEG). The lateral device structure of E-GaN HEMT and normally switched-on depletion mode GaN HEMT are compared. A device-under-test (DUT) equivalent model incorporating parasitic components is proposed, adopting the EPC2204 Level 3 SPICE model. The model is simulated in a novel Double Pulse Test (DPT) topology with clamping and snubber subcircuits using LTSPICE software. The performance of GaN E-HEMT is compared to a MOSFET with similar parameters, and the impact of parasitic inductances and stray capacitances is evaluated through switching analysis. Findings support the potential of E-GaN HEMTs and indicate the DC-DC converter design considerations for portable solar PV system applications. © Universiti Putra Malaysia Press. |
| first_indexed | 2024-12-09T02:26:35Z |
| format | Article |
| id | upm.eprints-113546 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-12-09T02:26:35Z |
| publishDate | 2024 |
| publisher | Universiti Putra Malaysia Press |
| record_format | dspace |
| spelling | upm.eprints-1135462024-11-26T04:01:39Z http://psasir.upm.edu.my/id/eprint/113546/ SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency Liu, Xinzhi Shafie, Suhaidi Mohd Radzi, Mohd Amran Azis, Norhafiz Norddin, Nurbahirah Lawal, Ismail Zulkifli, Normaziah Abdul Karim, Abdul Hafiz The advancement of renewable energy sources necessitates the development of effective power electronic devices. Enhancement-mode Gallium Nitride (E-GaN) high-electronmobility transistors (HEMTs), an emerging wide-bandgap semiconductor device, demonstrate potential in photovoltaic (PV) energy converting applications to enhance power transfer efficiency. This paper discusses the enhanced semiconducting characteristics of GaN HEMT over conventional silicon power devices by analyzing spontaneous and piezoelectric polarizations of wurtzite GaN crystalline structure and the formation of two-dimensional electron gas (2DEG). The lateral device structure of E-GaN HEMT and normally switched-on depletion mode GaN HEMT are compared. A device-under-test (DUT) equivalent model incorporating parasitic components is proposed, adopting the EPC2204 Level 3 SPICE model. The model is simulated in a novel Double Pulse Test (DPT) topology with clamping and snubber subcircuits using LTSPICE software. The performance of GaN E-HEMT is compared to a MOSFET with similar parameters, and the impact of parasitic inductances and stray capacitances is evaluated through switching analysis. Findings support the potential of E-GaN HEMTs and indicate the DC-DC converter design considerations for portable solar PV system applications. © Universiti Putra Malaysia Press. Universiti Putra Malaysia Press 2024 Article PeerReviewed text en cc_by_nc_nd_4 http://psasir.upm.edu.my/id/eprint/113546/1/113546.pdf Liu, Xinzhi and Shafie, Suhaidi and Mohd Radzi, Mohd Amran and Azis, Norhafiz and Norddin, Nurbahirah and Lawal, Ismail and Zulkifli, Normaziah and Abdul Karim, Abdul Hafiz (2024) SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency. Pertanika Journal of Science and Technology, 32 (3). pp. 1243-1262. ISSN 0128-7680; eISSN: 2231-8526 http://www.pertanika.upm.edu.my/pjst/browse/regular-issue?article=JST-4540-2023 10.47836/pjst.32.3.14 |
| spellingShingle | Liu, Xinzhi Shafie, Suhaidi Mohd Radzi, Mohd Amran Azis, Norhafiz Norddin, Nurbahirah Lawal, Ismail Zulkifli, Normaziah Abdul Karim, Abdul Hafiz SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title | SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title_full | SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title_fullStr | SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title_full_unstemmed | SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title_short | SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency |
| title_sort | spice modeling and performance analysis of enhancementmode gan hemt for augmented hard switching energy conversion efficiency |
| url | http://psasir.upm.edu.my/id/eprint/113546/1/113546.pdf |
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