SPICE modeling and performance analysis of EnhancementMode GaN HEMT for augmented hard-switching energy conversion efficiency
The advancement of renewable energy sources necessitates the development of effective power electronic devices. Enhancement-mode Gallium Nitride (E-GaN) high-electronmobility transistors (HEMTs), an emerging wide-bandgap semiconductor device, demonstrate potential in photovoltaic (PV) energy convert...
| Egile Nagusiak: | , , , , , , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
Universiti Putra Malaysia Press
2024
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| Sarrera elektronikoa: | http://psasir.upm.edu.my/id/eprint/113546/1/113546.pdf |