Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics
Colossal dielectric constant materials such CaCu3Ti4O12 (CCTO) have recently received an enormous of attention because of their potential in technological applications due to the formation of internal barrier layer capacitor (IBLC) contains semiconducting grains with insulating grain boundaries. Ca1...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Malaysian Solid State Science and Technology Society
2009
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| Online Access: | http://psasir.upm.edu.my/id/eprint/12906/1/Ac%20conductivity%20of%20Ca1.pdf |
| _version_ | 1796968323580166144 |
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| author | Mustafa, Mazni Wan Yusoff, Wan Mohamad Daud Talib , Zainal Abidin Shaari, Abdul Halim Mohamed Kamari, Halimah Primus, Walter Charles |
| author_facet | Mustafa, Mazni Wan Yusoff, Wan Mohamad Daud Talib , Zainal Abidin Shaari, Abdul Halim Mohamed Kamari, Halimah Primus, Walter Charles |
| author_sort | Mustafa, Mazni |
| collection | UPM |
| description | Colossal dielectric constant materials such CaCu3Ti4O12 (CCTO) have recently received an enormous of attention because of their potential in technological applications due to the formation of internal barrier layer capacitor (IBLC) contains semiconducting grains with insulating grain boundaries. Ca1-xSrxCu3Ti4O12(CSCTO) and Ca1-xBaxCu3Ti4O12
(CBCTO) with x = 0.0 and 0.2 ceramics has been doped on Ca site with strontium or barium was prepared using solid state reaction technique. X-ray diffraction pattern shows single phase with cubic structure. In complex impedance plot for both the ceramics show three semicircular arcs re
present the grain, the grain boundary and electrode effect responses and modeled using series network of three parallel RC circuits. Two regions were found in conductiv ity plot due to the grain boundary at low frequencies and the grain at high frequencies. The n value obtained from the fitting at the grain region at high frequency dependent are above 0.6 indicates of electron hopping conduction mechanism among Ti 3+and Ti4+. The activation energy values for CCTO are 0.28 eV and 0.74 eV for grain and grain boundary regions, respectively while for CSCTO the energies is 0.27 eVand 0.71 and for CBCTO is 0.31 eV and 0.59
eV for the grain and grain boundary regions respectively. |
| first_indexed | 2024-03-06T07:26:46Z |
| format | Article |
| id | upm.eprints-12906 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T07:26:46Z |
| publishDate | 2009 |
| publisher | Malaysian Solid State Science and Technology Society |
| record_format | dspace |
| spelling | upm.eprints-129062015-10-22T04:00:00Z http://psasir.upm.edu.my/id/eprint/12906/ Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics Mustafa, Mazni Wan Yusoff, Wan Mohamad Daud Talib , Zainal Abidin Shaari, Abdul Halim Mohamed Kamari, Halimah Primus, Walter Charles Colossal dielectric constant materials such CaCu3Ti4O12 (CCTO) have recently received an enormous of attention because of their potential in technological applications due to the formation of internal barrier layer capacitor (IBLC) contains semiconducting grains with insulating grain boundaries. Ca1-xSrxCu3Ti4O12(CSCTO) and Ca1-xBaxCu3Ti4O12 (CBCTO) with x = 0.0 and 0.2 ceramics has been doped on Ca site with strontium or barium was prepared using solid state reaction technique. X-ray diffraction pattern shows single phase with cubic structure. In complex impedance plot for both the ceramics show three semicircular arcs re present the grain, the grain boundary and electrode effect responses and modeled using series network of three parallel RC circuits. Two regions were found in conductiv ity plot due to the grain boundary at low frequencies and the grain at high frequencies. The n value obtained from the fitting at the grain region at high frequency dependent are above 0.6 indicates of electron hopping conduction mechanism among Ti 3+and Ti4+. The activation energy values for CCTO are 0.28 eV and 0.74 eV for grain and grain boundary regions, respectively while for CSCTO the energies is 0.27 eVand 0.71 and for CBCTO is 0.31 eV and 0.59 eV for the grain and grain boundary regions respectively. Malaysian Solid State Science and Technology Society 2009 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/12906/1/Ac%20conductivity%20of%20Ca1.pdf Mustafa, Mazni and Wan Yusoff, Wan Mohamad Daud and Talib , Zainal Abidin and Shaari, Abdul Halim and Mohamed Kamari, Halimah and Primus, Walter Charles (2009) Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics. Solid State Science and Technology, 17 (1). pp. 222-228. ISSN 0128-7389 http://journal.masshp.net/volume-17-no-1-2009/ |
| spellingShingle | Mustafa, Mazni Wan Yusoff, Wan Mohamad Daud Talib , Zainal Abidin Shaari, Abdul Halim Mohamed Kamari, Halimah Primus, Walter Charles Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title | Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title_full | Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title_fullStr | Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title_full_unstemmed | Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title_short | Ac conductivity of Ca1-xAxCu3Ti4O12 (A=Sr or Ba) with x=0.0 and 0.2 ceramics |
| title_sort | ac conductivity of ca1 xaxcu3ti4o12 a sr or ba with x 0 0 and 0 2 ceramics |
| url | http://psasir.upm.edu.my/id/eprint/12906/1/Ac%20conductivity%20of%20Ca1.pdf |
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