Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic

The prepared Ba0.6La0.4Sn0.6Mn0.4O3 ceramic sample using solid state technique has been studied and its dielectric behaviour as a function of frequency and temperature are presented in normalized form. At -25 to 75 ºC, the dielectric spectra displayed the behaviour of low frequency dispersion (LFD)...

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Main Authors: Primus, Walter Charles, Shaari, Abdul Halim, Wan Yusoff, Wan Mohamad Daud, Talib, Zainal Abidin
Format: Article
Language:English
Published: Malaysian Solid State Science and Technology Society 2010
Online Access:http://psasir.upm.edu.my/id/eprint/14046/1/Dielectric%20characterization%20of%20Ba0.pdf
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author Primus, Walter Charles
Shaari, Abdul Halim
Wan Yusoff, Wan Mohamad Daud
Talib, Zainal Abidin
author_facet Primus, Walter Charles
Shaari, Abdul Halim
Wan Yusoff, Wan Mohamad Daud
Talib, Zainal Abidin
author_sort Primus, Walter Charles
collection UPM
description The prepared Ba0.6La0.4Sn0.6Mn0.4O3 ceramic sample using solid state technique has been studied and its dielectric behaviour as a function of frequency and temperature are presented in normalized form. At -25 to 75 ºC, the dielectric spectra displayed the behaviour of low frequency dispersion (LFD) where some of the charge carriers (electronic) are bound and some are moving freely. However, at elevated temperature above 75 ºC, the carrier’s blockade occurred due to the rising up of interfacial and internal barrier effect at low and intermediate frequency, respectively.
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spelling upm.eprints-140462015-10-29T03:45:13Z http://psasir.upm.edu.my/id/eprint/14046/ Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic Primus, Walter Charles Shaari, Abdul Halim Wan Yusoff, Wan Mohamad Daud Talib, Zainal Abidin The prepared Ba0.6La0.4Sn0.6Mn0.4O3 ceramic sample using solid state technique has been studied and its dielectric behaviour as a function of frequency and temperature are presented in normalized form. At -25 to 75 ºC, the dielectric spectra displayed the behaviour of low frequency dispersion (LFD) where some of the charge carriers (electronic) are bound and some are moving freely. However, at elevated temperature above 75 ºC, the carrier’s blockade occurred due to the rising up of interfacial and internal barrier effect at low and intermediate frequency, respectively. Malaysian Solid State Science and Technology Society 2010 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/14046/1/Dielectric%20characterization%20of%20Ba0.pdf Primus, Walter Charles and Shaari, Abdul Halim and Wan Yusoff, Wan Mohamad Daud and Talib, Zainal Abidin (2010) Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic. Solid State Science and Technology, 18 (1). pp. 72-76. ISSN 0128-7389
spellingShingle Primus, Walter Charles
Shaari, Abdul Halim
Wan Yusoff, Wan Mohamad Daud
Talib, Zainal Abidin
Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title_full Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title_fullStr Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title_full_unstemmed Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title_short Dielectric characterization of Ba0.6La0.4Sn0.6Mn0.4O3 ceramic
title_sort dielectric characterization of ba0 6la0 4sn0 6mn0 4o3 ceramic
url http://psasir.upm.edu.my/id/eprint/14046/1/Dielectric%20characterization%20of%20Ba0.pdf
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