Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope
In this paper, we have investigated the characteristics and transport features of junctionless lateral gate transistors via measurement and simulations. The transistor is fabricated using an atomic force microscopy (AFM) nanolithography technique on silicon-on-insulator (SOI) wafer. This work develo...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH Verlag
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/28869/1/Simulation%20of%20transport%20in%20laterally%20gated%20junctionless%20transistors%20fabricated%20by%20local%20anodization%20with%20an%20atomic%20force%20microscope.pdf |