Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method
High transparent In2O3 and Cr-doped In2O3 (In2−xCrxO3) nanocrystalline thin films were prepared using a simple sol–gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2−xCrxO3 were systematically in...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
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Elsevier
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/30071/1/Electrical%20transport.pdf |
| _version_ | 1796971667439747072 |
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| author | Baqiah, H. Ibrahim, Noor Baa'yah Abdi, M. H. Shaari, Abdul Halim |
| author_facet | Baqiah, H. Ibrahim, Noor Baa'yah Abdi, M. H. Shaari, Abdul Halim |
| author_sort | Baqiah, H. |
| collection | UPM |
| description | High transparent In2O3 and Cr-doped In2O3 (In2−xCrxO3) nanocrystalline thin films were prepared using a simple sol–gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2−xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV–vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (2 2 2) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x ⩽ 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0–0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details. |
| first_indexed | 2024-03-06T08:16:24Z |
| format | Article |
| id | upm.eprints-30071 |
| institution | Universiti Putra Malaysia |
| language | English English |
| last_indexed | 2024-03-06T08:16:24Z |
| publishDate | 2013 |
| publisher | Elsevier |
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| spelling | upm.eprints-300712015-08-24T07:20:59Z http://psasir.upm.edu.my/id/eprint/30071/ Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method Baqiah, H. Ibrahim, Noor Baa'yah Abdi, M. H. Shaari, Abdul Halim High transparent In2O3 and Cr-doped In2O3 (In2−xCrxO3) nanocrystalline thin films were prepared using a simple sol–gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2−xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV–vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (2 2 2) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x ⩽ 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0–0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details. Elsevier 2013 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/30071/1/Electrical%20transport.pdf Baqiah, H. and Ibrahim, Noor Baa'yah and Abdi, M. H. and Shaari, Abdul Halim (2013) Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method. Journal of Alloys and Compounds, 575. pp. 198-206. ISSN 0925-8388; ESSN: 1873-4669 10.1016/j.jallcom.2013.04.089 English |
| spellingShingle | Baqiah, H. Ibrahim, Noor Baa'yah Abdi, M. H. Shaari, Abdul Halim Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title | Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title_full | Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title_fullStr | Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title_full_unstemmed | Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title_short | Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol–gel method |
| title_sort | electrical transport microstructure and optical properties of cr doped in2o3 thin film prepared by sol gel method |
| url | http://psasir.upm.edu.my/id/eprint/30071/1/Electrical%20transport.pdf |
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